Automated lifetime monitoring for factory process control

Study of the traps at a mercury cadmium telluride–anodic oxide interface using a transient photoconductive decay technique

“…A transient photoconductive (PC) decay technique has previously been used to measure the surface recombination velocity and lifetime of the excess photo-generated carriers in semiconductors [1][2][3][4][5][6]. Recently, it has been shown that the usefulness of this technique can be further enhanced to study interface traps by extending the range of measurements to relatively higher bias currents [7].…”