Autodoping effects of Ge in vapor-grown GaAsl-xPx layers on the Ge substrates

Kasano, Hiroyuki

doi:10.1016/0038-1101(73)90098-1

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…This conventional optical characterization, supported by x-ray topography, leads to the conclusion that degradation of structural quality due to misfit dislocations and residuai impurity Cu (10) are important for the bulk properties of these GaAs layers. The concentration of Ge involved is estimated to be less than 1 • 1017 atoms/cm 8 except for the interface region, which is different from the case of GaAsl-xPx layers (11).…”

mentioning

confidence: 58%

“…where PHcl(OaAs) is the equilibrium partial pressure of HC1 over the GaAs source and equals 3PAscIJ(1 -6 4x/Kp/PAs4). The equilibrium constant of the G aAs-AsCla-He system, Kp, has been calculated (11). By inserting the values of the growth parameters (the source temperature, the substrate temperature, and the partial pressure of AsC13) adopted in this experiment into the above equations, we get PGeHCl3 ~ < 1 X 10 -c atm.…”

Section: Resultsmentioning

confidence: 99%

“…The substrate, Ge, was doped with arsenic (p ~ 3 ,~ 5 • 1,0 -8 ohm-cm). The front face of the substrate was polished to a mirror surface and chemically etched with a solution of 1HF: 1H202:1H2SO4 prior fo use, whereas the back and side faces of the substrate were coated with a Si polycrytalline film (11). Unintentionally doped GaAs crystals (n : 1 ~ 3 • 1017 cm -3) and Te-doped ones (n : 1 • 1018 cm -8) were used as source materials for the epitaxy.…”

Section: Methodsmentioning

confidence: 99%

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Optical Characterization of GaAs Layers Grown on Ge Substrates

Kasano

Hosoki

1975

J. Electrochem. Soc.

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The structural quality of normalGaAs layers grown on Ge substrates has been optically characterized as a function of the distance d from normalGaAs‐normalGe interface along the growth axis, supported by electrical measurement and also by x‐ray measurement. It is found that the degradation of the structural quality due to interface alloying and autodoping of Ge can be detected in the grown layers only within ∼3μ from the interface, where the concentration of Ge involved would exceed 1×1017 normalatoms/cm3 . However, the degradation caused by misfit dislocations extends as far as 80μ from the interface, in spite of the fact that the dislocation density decreases exponentially with increasing d . These misfit dislocations introduce quite effective nonradiative recombination centers in normalGaAs , which quench the luminescence intensity, L , in a form of L=Alogfalse(1×106/Nfalse) , where N is the density of these nonradiative recombination centers and A is a constant. If the normalGaAs layers are contaminated with Cu during the growth process, it is found that L is reduced in such a way that the constant A in the above equation is decreased.

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confidence: 58%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Optical Characterization of GaAs Layers Grown on Ge Substrates

Kasano

Hosoki

1975

J. Electrochem. Soc.

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“…This Ge can act to compensate intentional dopants in GaAs device layers and increase free-carrier absorption in laser active regions. Work by Srinivasan [8] and others [9], [ 10] has shown that autodoping can occur via transport in the vapor phase during film growth, and that this gas-phase reaction depends strongly on reactor pressure and on the temperature and time of pregrowth annealing.…”

Section: Introductionmentioning

confidence: 99%

Strategies For Direct Monolithic Integration of Al_xGa_(1−x)As/In_xGa_(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded Ge_xSi_(1−x) Buffer Layers

et al. 2001

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AlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and threshold current densities of 1550A/cm2. Identical devices grown on commercial GaAs substrates showed differential quantum efficiencies of 0.14 and threshold current densities of 1700A/cm2. This comparative data agrees with our previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates. A number of GaAs/Ge/Si integration issues including thermal expansion mismatch and Ge autodoping behavior in GaAs were overcome.

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