MRS Proc. 2001 DOI: 10.1557/proc-692-h9.30.1 View full text
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Michael E. Groenert, Christopher W. Leitz, Arthur J. Pitera, Vicky K. Yang, Harry Lee, Rajeev J. Ram, Eugene A. Fitzgerald

Abstract: AbstractAlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and thr…

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