Auger recombination in intrinsic GaAs

Strauß, Uwe; Rühle, W. W.; Köhler, K.

doi:10.1063/1.108817

Cited by 174 publications

(93 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Since the Auger recombination coefficients have been reported to be between 10 À30 cm 6 s À1 (Ref. 14) and (7 6 4) Â 10 À30 cm 6 s À1 , 30 it is possible that the coefficients are slightly larger than those adopted in this study. The relative SRH recombination rate at high injection, where the system reaches close to 100% effective radiative efficiency, is not shown here.…”

Section: Appendix A: Relative Recombination Rates Over Injectioncontrasting

confidence: 38%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 1017 cm−3) for an injected excess carrier concentration below 4 × 1012 cm−3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

show abstract

Section: Appendix A: Relative Recombination Rates Over Injectioncontrasting

confidence: 38%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…10,15,16 This expression is applicable under high injection, where the carrier concentration is dominated by light generation and is proportional to n i e qV oc /2kT (for a discussion of general, rather that Auger, non-radiative recombination with a constant internal fluorescence yield, see the supplemental information). High quality material with a Shockley-Read-Hall lifetime greater than 14.3 ms and surface recombination velocity less than 1.75 cm s 21 for a 500-nm-thick cell is required for Auger recombination to be dominant at open circuit.…”

Section: Methodsmentioning

confidence: 99%

“…Since GaAs can be fabricated with very high purity and excellent surface passivation via III-V capping layers, we consider only Auger recombination as it is the sole intrinsic, unavoidable source of nonradiative recombination. 15,[21][22][23][24] With increased voltage from photon recycling, Auger recombination increases relative to radiative emission. Thus, as Figure 2b illustrates, the effect of Auger recombination is the greatest for narrow emission angles, and there is little benefit for emission angles below 1 6 .…”

Section: (2)mentioning

confidence: 99%

Highly efficient GaAs solar cells by limiting light emission angle

et al. 2013

View full text Add to dashboard Cite

In a conventional flat plate solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically. This isotropic emission corresponds to a significant entropy increase in the solar cell, with a corresponding drop in efficiency. Here, using a detailed balance model, we show that limiting the emission angle of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38% with a single junction. The highest efficiencies are predicted for a thin, light trapping cell with an ideal back reflector, though the scheme is robust to a non-ideal back reflector. Comparison with a conventional planar cell geometry illustrates that limiting emission angle in a light trapping geometry not only allows for much thinner cells, but also for significantly higher overall efficiencies with an excellent rear reflector. Finally, we present ray-tracing and detailed balance analysis of two angular coupler designs, show that significant efficiency improvements are possible with these couplers, and demonstrate initial fabrication of one coupler design.

show abstract

“…The dashed curves in Due to the moderate density of photo-excited carriers, Auger recombination processes 60 are not expected to be the relevant mechanism for the observed non-exponential decay. We interpret the decay in Fig.…”

Section: Excitation Energy Dependencementioning

confidence: 99%