Auger electron spectroscopy and low energy electron loss spectroscopy investigations of plasma- nitrided thin thermal SiO2 and native oxide on silicon

Atanassova, E.; Shopov, A.

doi:10.1016/0040-6090(91)90098-i

Cited by 5 publications

(3 citation statements)

References 32 publications

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“…Quantitative analysis (Figure ) also reveals that quantity of the oxygen transported into the APS increases with an increase of etching time but is saturated in ca. SiO 1.3 at 120 s. , These phenomena accurately correspond with the APS growth aspects. Thus, the APS growth can be described by the oxygen diffusion into silicon depending on the applied etching time. ,,,− , …”

Section: Resultssupporting

confidence: 71%

“…For quantitative analysis of the APSs we used a calculation method expressed as follows: [ A ] atomic % = I normalA / F normalA ∑ I / F × 100 where A is an element, I is the intensity, and F is the sensitivity factor. Based on the standard SiO 2 , the sensitivity factors of silicon and oxygen were defined, and using the peak-to-peak height ratio of the Si–O bonds in the Si LVV and in the O KLL the intensities were determined …”

Section: Methodsmentioning

confidence: 99%

“…Based on the standard SiO 2 , the sensitivity factors of silicon and oxygen were defined, and using the peak-to-peak height ratio of the Si−O bonds in the Si LVV and in the O KLL the intensities were determined. 42 3. RESULTS AND DISCUSSION 3.1.…”

Section: Methodsmentioning

confidence: 99%

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Experimentally Derived Catalytic Etching Kinetics for Defect-Utilized Dual-Porous Silicon Formation

2012

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A kinetic model of defect-utilized dual-porous structure (DPS) formation of silicon, composed of amorphous porous structure (APS) and defect-followed mesoporous structure (DMPS), is proposed. It is found that a defect site is preferentially removed while creating the oblique DMPS of high aspect ratio, and the DMPS is wholly covered with the APS which is gradually grown through applied etching time but finally saturated. It is suggested that the APS growth is progressed by the chemically enhanced-oxygen diffusion, which is driven by catalytic chemical reactions, and the APS dissolution depends on the oxygen concentration of the APS itself. On the basis of these results, we describe the DPS formation using fundamental reaction kinetics and Fick's law of diffusion. Understanding the APS growth mechanism is profound and potentially useful for prediction and controlling of the porous Si growth in the conventional HF/HNO 3 /H 2 O etching system. The DMPS development at the defect sites is ca. 22 times faster than the defect-free sites due to varied physicochemical properties. This analytical approach is a new attempt to describe the porous silicon formation mechanism as well as the conventional HF/HNO 3 /H 2 O etching procedure and further opens a new domain for the viability of defect engineering.

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