AES study of the SiO2/SiC interface in the oxidation of CVD β-SiC

Berjoan, R.; Rodríguez, José Amparo; Sibieude, F.

doi:10.1016/0039-6028(92)90879-b

Cited by 23 publications

(15 citation statements)

References 18 publications

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“…The binding energy corresponding to the shoulder is too low to be attributed to SiO 2 (103 eV), but agrees with silicon oxycarbide (SiO x C y ) species, whose Si 2p binding energy ranges from 101 to 102 eV [29]. These silicon oxycarbide species possibly consisting of SiOC 3 , SiO 2 C and SiO 3 C with different percentages are proposed to exist at the SiC/SiO 2 interface in the previous investigation on the initial stages of oxidation for hexagonal and amorphous SiC [30][31][32]. In the initial stages of SiC exposure to room air ambient, the breakage of Si-C bonds and formation of SiO 2 is very unlikely.…”

Section: Resultsmentioning

confidence: 63%

Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS

et al. 2006

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The in-use adhesion characteristics of polycrystalline cubic silicon carbide (poly-SiC) films when used as a substrate material in MEMS applications are investigated using micromachined polycrystalline Si (poly-Si) cantilever beam arrays. The detachment lengths greater than 1500 lm are obtained, corresponding to an apparent work of adhesion of less than 0.006 mJ/m 2 . This is to be compared to the detachment lengths of less than 200 lm when poly-Si substrate is used, corresponding to the apparent work of adhesion of greater than 20 mJ/m 2 . To help understand the mechanism leading to the significant reduction in in-use adhesion, the poly-SiC surfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurement. Based on the data, it is suggested that the topography as well as the slower oxidation rate of poly-SiC films may be responsible for the observed adhesion reduction.

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Section: Resultsmentioning

confidence: 63%

Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS

et al. 2006

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“…In an attempt to explain why other authors, 8,[23][24][25][26] contrarily to us, have systematically found more complex interfaces ͑exhibiting particularly C-C or C-O components͒, we first mention the systematic thicker oxide layers these works are dealing with. Drawing a parallel with Si oxidation, the linear regime we observe in Fig.…”

Section: Discussionmentioning

confidence: 98%

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

et al. 1999

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Chemically abrupt SiO 2 /6H-SiC(0001) interfaces have been obtained after thin ͑Х5 nm͒ oxide thermal growth of the Si-terminated face. The originality of the paper resides in a simultaneous use of standard technological conditions for this oxidation ͑dry O 2 oxidation at 1 atmosphere and 1000°C͒ and in control and characterization of the starting substrates taken from in situ, ultrahigh vacuum-surface techniques. The oxidation of 3ϫ3 Si-rich and 6)ϫ6)R30°C-rich reconstructed surfaces is compared. In both cases no C-C bonds or C enrichment are observed at the SiO 2 /SiC interface by x-ray photoelectron spectroscopy C 1s analysis, the C-C bonds of the initially graphitized C-rich surface being removed during the first nanometer oxide growth. The interfacial suboxide components with binding energy between the substrate and SiO 2 Si 2p features remain below our detection limit. X-ray photoelectron diffraction analyses indicate that, below the oxide layer, the ordering and polarity of the 6H-SiC͑0001͒ are maintained. These results allow us to conclude that there is probably no fundamental contraindication to obtain nearly ideal SiO 2 /SiC interfaces on flat SiC terraces. Two growth regimes are observed in the oxide growth kinetics. They are discussed to determine the possible reasons of carbon exodiffusion or previously observed C enrichments at the SiO 2 /SiC interface.

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“…1 (BE > 100.1 eV) are much stronger for measurements done at 25°than at the 60°take-off angle due to the Si 2p photoelectron escape depths in SiC, which are 11 and 22.6Å, respectively. Because in the literature there have been several systems of intermediate oxides designations 7,8,11,12 and this work deals with the surface study, we consider the configurations of silicon oxycarbides at the SiC surface ofÖnneby and Pantano. 8 In order to explain what silicon oxycarbide species exist at the SiC surface, high-resolution Si 2p spectra at a 25°t ake-off angle (after background subtraction and Si 2p 1/2 peak stripping) were deconvoluted into five peaks, except the first spectrum for the freshly prepared sample that was deconvoluted into three peaks.…”

Section: Resultsmentioning

confidence: 99%

“…The growth of a silica layer at the surface was observed after thermal oxidation in oxygen, 6,7,8,10,12,13 ozone 8 and air. 8,9,11 The existence of some intermediate species such as SiO x C y at the interface between SiC and SiO 2 layers 7,11,13 14 showed that SiO x C y assumes an SiC-like structure when x < y and an SiO 2 -like structure when x > y.…”

Section: Introductionmentioning

confidence: 97%

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Oxidation of the silicon carbide surface in Watts' plating bath

Socha¹,

Laajalehto²,

Nowak³

2002

Surface & Interface Analysis

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An important problem in metal-matrix composite production by electrochemical co-deposition of SiC particles with nickel is the large variation of the SiC concentration in the composite. One of the possible reasons is the change of SiC surface properties due to its oxidation during contact with the plating bath. X-ray photoelectron spectroscopy was applied to study the surface oxidation of the [0001] basal plane of a-SiC crystals contacted with Watts' plating bath at 55• C. It was shown that the growth of silica at the surface is preceded by the formation of a silicon oxycarbide species (SiO x C y ). The formation of graphite-type carbon at the surface was also observed. The equivalent layer thickness of the main species at the oxidized surface was calculated.

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AES study of the SiO2/SiC interface in the oxidation of CVD β-SiC

Cited by 23 publications

References 18 publications

Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS

Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

Oxidation of the silicon carbide surface in Watts' plating bath

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