Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

Yong, Wu; Zhang, Weihang; Zhang, Jincheng; Zhao, Shenglei; Luo, Jie; Tan, Xiao-Hong; Mao, Wei; Zhang, Chunfu; Zhang, Yachao; Cheng, Kai; Liu, Zhihong

doi:10.1109/ted.2021.3093839

Cited by 15 publications

(4 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At 50 K, the type I non-radiative recombination center becomes fully ionized, while the type II non-radiative recombination center with a higher activation energy remains inactive. According to formula (9), the minority carrier lifetime increases with temperature. As the temperature exceeds 100 K, the type II non-radiative recombination center begins to ionize and assumes a dominant role.…”

Section: 𝜏 =mentioning

confidence: 99%

“…The versatile properties of AlGaN make it highly suitable for various optoelectronic applications, including ultraviolet light-emitting diodes (LEDs), laser diodes (LDs), and solar-blind avalanche photodiodes (APDs) [3][4][5][6]. Moreover, owing to its remarkable two-dimensional electron gas (2DEG) density and mobility, the AlGaN/GaN channel enables the realization of high-power electronic devices for applications in RF power and switching electronics [7][8][9]. Consequently, comprehensive investigations into the growth and material characterization of AlGaN hold significant importance for the advancement of AlGaN-based devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The optical properties of 325 nm AlGaN grown by MBE

Dai,

Yang,

Zhu

et al. 2024

Preprint

View full text Add to dashboard Cite

The influence of growth temperature on the crystalline quality and optical properties of AlGaN at 325 nm, grown using plasma-assisted molecular beam epitaxy (MBE), was investigated. The growth temperature exhibited a significant impact on the growth mode and surface morphology. Specifically, at a growth temperature of 750 degrees Celsius, when appropriate Al and Ga flow rates were employed, the AlGaN layer exhibited exceptional surface morphology and favorable optical properties. The optical properties of the AlGaN material were explored, revealing the presence of two distinct non-radiative recombination centers characterized by different activation energies. The minority carrier lifetimes were measured as 560 ps at 10 K and 64 ps at room temperature. The underlying mechanism was analyzed from the perspective of carrier dynamics, shedding light on the observed phenomena.

show abstract

Section: 𝜏 =mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The optical properties of 325 nm AlGaN grown by MBE

Dai,

Yang,

Zhu

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…12, the fabricated FCD-HEMT achieves the highest reverse breakdown voltage among the normally OFF devices while keeping a relatively low R ON,sp . 6,8,[16][17][18][19][20][21] This achievement is ascribed to the employment of the FCD structure as well as corresponding field control introduced in the device. Furthermore, the ON-state performance of the FCD-HEMT could be further improved by adopting optimal design on the drain p-GaN cap.…”

Section: Experimental Verificationmentioning

confidence: 99%

A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain

Xing¹,

Wang²,

Luo³

et al. 2022

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

A high reverse blocking voltage (BVR) p-GaN gate high electron mobility transistor with field control drain (FCD-HEMT) has been proposed and fabricated. The FCD-HEMT features the field control drain, consisting of electrically shorted Ohmic contact structure and p-GaN cap. In the OFF-state, the 2-Dimensional Electron Gas (2DEG) channel is cut off due to the p-GaN cap introduced field control, which provides FCD-HEMT with reverse blocking capability. In the ON-state, the re-formed 2DEG channel offers a non-potential barrier pathway for electrons transfer from source to drain and ensures a low resistance of the FCD-HEMT. The fabricated device exhibits 1400 V forward breakdown voltage (BVF) and -1240 V reverse breakdown voltage (BVR), 12.7 mΩ·cm2 low specific ON-resistance, and 188 mA/mm max drain current while maintaining normally-OFF capability. These results demonstrate the great potential of FCD-HEMTs in 1200 V-class power applications.

show abstract

“…As one of the key components for efficient and energy-saving power electronic systems, power semiconductors must be updated with high-voltage devices featuring outstanding performance in static and dynamic energy loss, current density, operating voltage and temperature, etc. [1][2][3][4]. Although silicon (Si) power devices have been widely used in diverse fields and industries, their application prospects are hindered by the limited bandgap and lower critical breakdown electric field.…”

Section: Introductionmentioning

confidence: 99%

Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors

Tian,

Ji,

Yang

et al. 2023

Electronics

View full text Add to dashboard Cite

The breakdown characteristics are very important for GaN high-electron-mobility transistors (HEMTs), which affect the application voltage, power density, efficiency, etc. In order to further enhance the breakdown voltage of the device, it is necessary to carry out research on the breakdown mechanisms of the device. This article summarizes several breakdown mechanisms of GaN devices, including electric field concentration, buffer leakage current, gate leakage current, and vertical breakdown. In order to suppress the breakdown mechanisms, techniques such as the use of a field plate, reduced surface field (RESURF), back barrier, gate dielectric, substrate removal, and addition of AlGaN channels can be developed. With the continuous development of various technologies, the breakdown characteristics of GaN devices can be fully explored, laying the foundation for improving the performance of power electronic systems.

show abstract

Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

Cited by 15 publications

References 42 publications

The optical properties of 325 nm AlGaN grown by MBE

The optical properties of 325 nm AlGaN grown by MBE

A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain

Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors

Contact Info

Product

Resources

About