Abstract:A high reverse blocking voltage (BVR) p-GaN gate high electron mobility transistor with field control drain (FCD-HEMT) has been proposed and fabricated. The FCD-HEMT features the field control drain, consisting of electrically shorted Ohmic contact structure and p-GaN cap. In the OFF-state, the 2-Dimensional Electron Gas (2DEG) channel is cut off due to the p-GaN cap introduced field control, which provides FCD-HEMT with reverse blocking capability. In the ON-state, the re-formed 2DEG channel offers a non-pote… Show more
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