Au doping effects in HfO2-based resistive switching memory

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

“…The results prove that dopants in the RS layer influence and might remarkably lower the formation energy of oxygen vacancies . As an experimental evidence, in the work of Tan et al, the effect of doping Au in Cu/HfO 2 :Au/Pt RRAM device is studied. In the Au doped HfO 2 RS layer, divalent oxygen vacancies (V o 2+ ) have the lowest energy among all the oxygen vacancy defects, which means oxygen vacancies are more likely to spread around Au dopants because of the lower formation energy.…”

Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications

“…However, while HfO 2 and ZrO 2 ‐based resistive switching devices perform well in certain areas, their properties are still not sufficient to meet application requirements. To achieve better resistive switching properties for memory devices, a doping process is usually required to improve the endurance performance and uniformity . Ryu et al proposed a HfO 2 ‐based bipolar resistive switching memory device with 9% ZrO 2 doping to improve the endurance and reduce the power consumption, and the thin film presented a relatively low OFF/ON ratio.…”

“…To achieve better resistive switching properties for memory devices, a doping process is usually required to improve the endurance performance and uniformity. [12][13][14][15][16][17] Ryu et al [18] proposed a HfO 2based bipolar resistive switching memory device with 9% ZrO 2 doping to improve the endurance and reduce the power consumption, and the thin film presented a relatively low OFF/ON ratio. In our previous work, an HfZrO (HZO)-based unipolar resistive switching memory device demonstrated a high OFF/ON ratio with good uniformity.…”

Au doping effects in ZrO<sub>2</sub>-based resistance random access memory based on first-principles calculations

“…结果表明, Al掺杂 后, ZrO 2 中氧空位的形成能有效降低, 氧空位在较小 的forming电压下产生并形成导电通道, 且导电细丝在 靠近掺杂元素附近优先生长. Gao等人 [25,26] 在Al掺杂的 HfO 2 器件中也计算获得类似结果, 并在实验中得以验 证. Tan等人 [27] 从实验和理论两方面研究了HfO 2 中Au 的掺杂效应, 发现掺杂Au可以显著降低HfO 2 中氧空位 的形成能, 提高HfO 2 基阻变存储器的参数均一性、开 关比、电阻保持特性等.…”

“…氧空位 的形成能可以用如下公式计算 [26,31] : 的库仑相互作用引起的 [35] . 关于Au掺杂其他二元氧化 物中氧空位形成能的计算也有一些报道, 如Tan等人 [27] 研究了Au掺杂HfO 2 体系, 发现氧空位形成能显著降低 了3.02 eV; Saqlain等人 [37] Au原子距离越近, 氧空位越容易形成. 由此, 我们推断…”