Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications

Wu, Zhiyuan; Zhu, Jing; Zhou, Yang; Liu, Xingpeng

doi:10.1002/pssa.201700396

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…In Figure , we compare our proposed novel structure with previously reported work. [ 35,37,62–68 ] Notably, our device demonstrated switching within an exceptionally low V RESET window, ranging from −4 to −30 mV. This level of performance at such a low voltage scale has not been reported before.…”

Section: Resultssupporting

confidence: 58%

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Asif,

Rakshit,

Kumar

2024

Advanced Physics Research

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Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements. A nanoscale polycrystalline Hf0.75Zr0.25O2 (HZO) thin films on Pt/Si substrate are fabricated and investigated for suitability for bipolar resistive switching. The device illustrates monoclinic and tetragonal/orthorhombic phases with weak ferroelectricity and robust resistive switching. Small remanent polarization (≈0.1 μC cm−2) may assist in the height reduction of barrier height and ease the electron for transport. Remarkably, the Al/HZO/Pt/Si device, consisting of thin films with 10 and 5 nm thicknesses, exhibits a switching voltage below −30 mV from a low‐resistance state (LRS) to a high‐resistance state (HRS). It shows a significant ROFF/RON ratio of 106, making it suitable for low power consumption and minimal heat dissipation devices. Moreover, the utilization of an ultrathin film (5 nm) results in an improved reduction (< 0.7 V) of the operating window at the positive voltage. Direct tunneling and the Fowler–Nordheim tunneling model are performed in current–voltage (I–V) data to study the charge transportation behavior over a trapezoidal and triangular potential barrier. These results of the HZO candidate may stimulate the futuristic nonvolatile resistive random‐access memory (ReRAM) in the optoelectronic industry.

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Section: Resultssupporting

confidence: 58%

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Asif,

Rakshit,

Kumar

2024

Advanced Physics Research

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“…[54] Based on the above results and discussion, we propose the corresponding physical models to describe the RS behavior in the all-inorganic CsPbBr 3 film based memory devices with different TE. [55] Generally, there is a small amount, randomly distributed Br vacancies existing in the CsPbBr 3 films in the initial state (Figure 7a). Figure 7a-c displays the whole RS behavior in the Pt-anode based memory device, including the initial state, SET and RESET processes.…”

Section: Wwwadvelectronicmatdementioning

confidence: 97%

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Zhu

Cheng

Shi

et al. 2019

Adv Elect Materials

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density, fast switching speed, multibit storage potential, and nonvolatile nature, is considered as one of the most promising candidate in nonvolatile memory field. [1][2][3] The RRAM device, with sandwich structure of top metal (TE)/ switching layer/bottom metal (BE), can be switched between a low resistance state (LRS) and high resistance state (HRS) under the stimulation of different voltage amplitudes or polarities. [4] Stable resistive switching (RS) behavior has been observed in various perovskite oxide materials based memory devices, for instances, SrTiO 3 , [5] BaTiO 3 , [6] and BiFeO 3 , [7] etc. However, the perovskite oxide-based RRAM devices are limited by several disadvantages, such as high processing temperature and rigid ceramic property of the switching layer. [8] In recent years, halide perovskites, with formula of ABX 3 (A = CH 3 NH 3+ , CH(NH 2 ) 2+ , Cs + ; B = Pb 2+ , Sn 2+ ; X = Cl − , Br − , I − ), have attracted intensive attention due to their huge potential applications in industrial applications, such as solar cells, [9] photodetectors, [10] light emitting diodes, [11] lasers, [12] and RS memory devices. [13] Many attempts have been focused on this material because of its outstanding properties, for instance, the low exciton binding energy, long-range charge diffusion length, high carrier mobility, high absorption coefficient, and suitable bandgaps. [14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [16,17] However, despite the demonstrated remarkable performances of the organicinorganic halide perovskites based devices, their industrial applications are limited to the instability, including the poor thermal stability and moisture sensitivity, which is due to the instability nature of the organic cations. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance. To address this issue, the organic cation is substituted by cesium (Cs) and the ascalled all-inorganic cesium lead halide perovskite (CsPbX 3 ) has attracted a great deal of attention in RS memory field. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. RS memory devices utilizing air-stable all-inorganic halide perovskite cesium lead bromide (CsPbBr 3 ) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr 3 film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈10 4 ), long data retention (>5 × 10 4 s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching b...

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“…In order to achieve better resistive switching characteristics for memory devices, a doping process is often required to improve endurance performance and uniformity [11]. Previously, limited studies have been performed on HZO-based RRAM devices [12,13].…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Reddy

2024

Mater. Tech. Rep.

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In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

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Bipolar Resistive Switching Properties of Hf_0.5Zr_0.5O₂ Thin Film for Flexible Memory Applications

Cited by 7 publications

References 23 publications

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

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Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications

Cited by 7 publications

References 23 publications

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Contact Info

Product

Resources

About

Bipolar Resistive Switching Properties of Hf_0.5Zr_0.5O₂ Thin Film for Flexible Memory Applications

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device