Abstract:In atomic multi-level systems, adiabatic elimination (AE) is a method used to minimize complicity of the system by eliminating irrelevant and strongly coupled levels by detuning them from one another. Such a three-level system, for instance, can be mapped onto physically in the form of a three-waveguide system. Actively detuning the coupling strength between the respective waveguide modes allows modulating light to propagate through the device, as proposed here. The outer waveguides act as an effective two-pho… Show more
“…Such linear absorption modulators, however do not utilize the strong real-part of the optical index-change in ITO upon carrier modulation (such as thermally or electro-statically); however, utilizing a directional coupler utilizes elsewise parastici Kramers-Kronig relation synergistically by deflecting the optical beam away form the downstream waveguide port, thus jointly enhancing the modulator's absorption capability [71]. Indeed such an active directional coupler based on electro-staitcally tuning ITO can be used to realize a 2x2 switch [72,73] or, when cascaded, forming an NxN compact nanophotonic router [74]. Such routers can be used for next generation networkon-chip directing data traffic between muli-core compute systems [75], for instance, or in programming the weights of an artificial optical neural-network [76].…”
Section: Technology Impact Of the Resultsmentioning
Here we report on studying the electronic and optical material properties of the technologically-relevant material indium tin oxide (ITO) as a function of thermal annealing. In this work, ITO powder has been prepared utilizing solid-state reaction methods. An electron beam gun technology has been used to prepare a ITO film (~325 nm). The ITO window layer has been investigated at various temperatures. The effects of absolute temperature on the structural, optical, and electrical properties of the prepared ITO thin film layer are investigated. The energy band type corresponding to the orbital transitions has been determined, and the energies of the orbital transitions have been calculated in the Tauc region, HOMO/LUMO gap, and charge transfer gap. In additions, the exciton and Urbach energies have been computed. It has been found that these energies increase with increasing the annealing temperature, except for Urbach's energies which behave differently. Thin-film quality coefficient, surface resistance, and thermal emission in addition to the angle of refraction as a function of wavelength, have been determined.
“…Such linear absorption modulators, however do not utilize the strong real-part of the optical index-change in ITO upon carrier modulation (such as thermally or electro-statically); however, utilizing a directional coupler utilizes elsewise parastici Kramers-Kronig relation synergistically by deflecting the optical beam away form the downstream waveguide port, thus jointly enhancing the modulator's absorption capability [71]. Indeed such an active directional coupler based on electro-staitcally tuning ITO can be used to realize a 2x2 switch [72,73] or, when cascaded, forming an NxN compact nanophotonic router [74]. Such routers can be used for next generation networkon-chip directing data traffic between muli-core compute systems [75], for instance, or in programming the weights of an artificial optical neural-network [76].…”
Section: Technology Impact Of the Resultsmentioning
Here we report on studying the electronic and optical material properties of the technologically-relevant material indium tin oxide (ITO) as a function of thermal annealing. In this work, ITO powder has been prepared utilizing solid-state reaction methods. An electron beam gun technology has been used to prepare a ITO film (~325 nm). The ITO window layer has been investigated at various temperatures. The effects of absolute temperature on the structural, optical, and electrical properties of the prepared ITO thin film layer are investigated. The energy band type corresponding to the orbital transitions has been determined, and the energies of the orbital transitions have been calculated in the Tauc region, HOMO/LUMO gap, and charge transfer gap. In additions, the exciton and Urbach energies have been computed. It has been found that these energies increase with increasing the annealing temperature, except for Urbach's energies which behave differently. Thin-film quality coefficient, surface resistance, and thermal emission in addition to the angle of refraction as a function of wavelength, have been determined.
“…no cavity feedback) 37 . However, the switching energy of directional-coupler based 2 × 2 switches, for instance, does improve with the effective mode’s index change 52 , which, as we have seen herein, can be rather high using ITO hybrid photonics. Figure 5 RF electro-optic modulation measurements and performance metrics across different phase-shifter scaling.…”
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VπL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.
“…In the past decade, research on plasmonic modulators investigated a number of EOM and EAM solutions, exploiting organic or inorganic EO materials (like ITO and ferroelectric materials), see various studies. [ 44–50 ] A research line on organic plasmonic EO modulators leading to experimental realizations was initiated in 2014 through the cooperation of a number of research groups (initially from the Karlsruhe Institute of Technology—KIT, ETH Zürich, IMEC, and GigOptix) and continued through the following years. In the study by Melikyan et al, [ 51 ] Au plasmonic POH phase modulator was presented based on an EO polymer with maximum estimated EO coefficient of 70 pm V −1 after poling, integrated into an SOI platform with a 2 μm SiO 2 thick layer; the modulator length was around 30 μm.…”
Herein, an overview on the physics‐based and system‐oriented modeling of organic electro‐optic Mach–Zehnder modulators for optical communication systems is presented. State‐of‐the‐art solutions in electro‐optic organic materials and modulator designs are reviewed, with particular stress on silicon organic hybrid (SOH) and plasmonic organic hybrid (POH) solutions. Then, the physics‐based simulation of concentrated and traveling‐wave modulators is discussed both through 3D optical simulations and a combination of 2D and 3D models, where the modulator is partitioned into convenient subdomains. Neural network behavioral models are finally discussed and case studies are proposed on the physics‐based and system‐level simulation of SOH and POH Mach–Zehnder modulators.
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