Optical modulators with ultrahigh speed, small footprint, large bandwidth, robust athermal operation, and complementary metal-oxide semiconductor (CMOS) compatibility are important devices for optical communication and computing applications. Compared to the conventional optical modulators, graphene modulators have attracted great interest due to their large optical bandwidth with an ultracompact footprint. However, their practical applications are limited by the trade-off between speed and optical bandwidth, with a critical issue of temperature tolerance. In this work, we experimentally demonstrate an athermal graphene optical modulator with a 140 nm bandwidth in the entire optical communication regime (1500–1640 nm), with robust high-temperature operation. The device is based on a planar structure with double-layer graphene, leading to the high modulation speed, up to 35 GHz through reduction of the total resistance, and capacitance (9 fF). We observe speed stability in a wide range of temperatures (25–145 °C). The ultracompact footprint (18 μm2) of the device promises the next generation of on-chip optical interconnections for efficient communication.

Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance.In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-oninsulator platform with high-responsivity given the 5 µm-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-doping contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphene's Dirac point and the observed non-ambipolar transport. Such micrometer compact and absorption-efficient photodetectors allow for short-carrier pathways in nextgeneration photonic components, while being an ideal testbed to study short-channel carrier physics in graphene optoelectronics. Introduction.Graphene has become a complementary platform for electronics and optoelectronics because of its remarkable properties and versatility(1). A variety of applications exploit graphene's peculiar features to include modulators(2), plasmonic optoelectronics(3-6), photovoltaic devices (7), ultrafast lasers (8), and photo-detection(9, 10). For photo conversion applications the linear and gap-less band structure of graphene results in wavelength-independent absorption (11,12).Moreover, graphene's carrier can be tuned via electrostatically doping, thus modulating light absorption. Due to its superb carrier mobility (13,14), graphene-based absorption enables ultrafast conversion of photons or plasmons to electrical currents or voltages. However, the light-graphene interaction, and consequently the responsivity of graphene-based devices, is usually rather weak due to the geometrical mismatch between graphene's atom-thin thickness and the diffractionlimited optical mode area of photonic components.The first-generation of graphene-based free-space photodetectors (PDs) uses metal-graphenemetal structures(14); choosing different work-functions for the source-and drain contacts results in an asymmetric band structure, thus enabling non-biased band-bending for charge polarity separation, leading to near-zero dark current. Interdigitated metallic contacts, are typically adopted Corresponding AuthorVolker Sorger, sorger@gwu.edu Funding SourcesVS is funded by AFOSR (FA9550-17-1-0377) and ARO (W911NF-16-2-0194).

Machine intelligence has become a driving factor in modern society. However, its demand outpaces the underlying electronic technology due to limitations given by fundamental physics, such as capacitive charging of wires, but also by system architecture of storing and handling data, both driving recent trends toward processor heterogeneity. Task-specific accelerators based on free-space optics bear fundamental homomorphism for massively parallel and real-time information processing given the wave nature of light. However, initial results are frustrated by data handling challenges and slow optical programmability. Here we introduce a novel amplitude-only Fourier-optical processor paradigm capable of processing large-scale ∼ ( 1000 × 1000 ) matrices in a single time step and 100 µs-short latency. Conceptually, the information flow direction is orthogonal to the two-dimensional programmable network, which leverages 10 6 parallel channels of display technology, and enables a prototype demonstration performing convolutions as pixelwise multiplications in the Fourier domain reaching peta operations per second throughputs. The required real-to-Fourier domain transformations are performed passively by optical lenses at zero-static power. We exemplary realize a convolutional neural network (CNN) performing classification tasks on 2 megapixel large matrices at 10 kHz rates, which latency-outperforms current graphic processing unit and phase-based display technology by 1 and 2 orders of magnitude, respectively. Training this optical convolutional layer on image classification tasks and utilizing it in a hybrid optical-electronic CNN, shows classification accuracy of 98% (Modified National Institute of Standards and Technology) and 54% (CIFAR-10). Interestingly, the amplitude-only CNN is inherently robust against coherence noise in contrast to phase-based paradigms and features a delay over 2 orders of magnitude lower than liquid-crystal-based systems. Such an amplitude-only massively parallel optical compute paradigm shows that the lack of phase information can be accounted for via training, thus opening opportunities for high-throughput accelerator technology for machine intelligence with applications in network-edge processing, in data centers, or in pre-processing information or filtering toward near-real-time decision making.

Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously integrated with Si photonics open a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity order index at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electrooptic modulator based on a Mach Zehnder interferometer (MZI) featuring a high-performance half-wave voltage and active device length product, VpL = 0.52 V•mm. We show, how that the unity-strong index change enables a 30 micrometer-short pphase shifter operating ITO in the index-dominated region away from the epsilon-bear-zero ENZ point. This device experimentally confirms electrical phase shifting in ITO enabling its use in multifaceted applications including dense on-chip communication networks, nonlinearity for activation functions in photonic neural networks, and phased array applications for LiDAR.

This paper deals with the design and microfabrication of two three-dimensional (3D) freestanding patterned strain sensors made of single-walled carbon nanotube (SWCNT) nanocomposites with the ultraviolet-assisted direct-write (UV-DW) technique. The first sensor consisted of three nanocomposite microfibers suspended between two rectangular epoxy pads. The flexibility of the UV-DW technique enables the sensor and its housing to be manufactured in one monolithic structure. The second sensor was composed of a nanocomposite network consisting of four parallel microsprings, which demonstrates the high capability of the technique when compared to conventional photolithographic technologies. The performances of the sensors were assessed under tension and compression, respectively. The sensors' sensitivities were evaluated by correlating their measured resistivities to the applied displacements/strains. Electrical conductivity measurements revealed that the manufactured sensors are highly sensitive to small mechanical disturbances, especially for lower nanotube loadings when compared to traditional metallic or nanocomposite films. The present manufacturing method offers a new perspective for manufacturing highly sensitive 3D freestanding microstructured sensors.

The past two decades have witnessed the stagnation of the clock speed of microprocessors followed by the recent faltering of Moore’s law as nanofabrication technology approaches its unavoidable physical limit. Vigorous efforts from various research areas have been made to develop power-efficient and ultrafast computing machines in this post-Moore’s law era. With its unique capacity to integrate complex electro-optic circuits on a single chip, integrated photonics has revolutionized the interconnects and has shown its striking potential in optical computing. Here, we propose an electronic-photonic computing architecture for a wavelength division multiplexing-based electronic-photonic arithmetic logic unit, which disentangles the exponential relationship between power and clock rate, leading to an enhancement in computation speed and power efficiency as compared to the state-of-the-art transistors-based circuits. We experimentally demonstrate its practicality by implementing a 4-bit arithmetic logic unit consisting of 8 high-speed microdisk modulators and operating at 20 GHz. This approach paves the way to future power-saving and high-speed electronic-photonic computing circuits.

A concept for the bandwidth enhancement of directly modulated vertical-cavity surface emitting lasers (VCSELs) using a transverse-coupled-cavity (TCC) scheme is proposed, which enables us to tailor the modulation-transfer function. A bow-tie shaped oxide aperture forms the transverse-coupled cavity resulting in optical feedback to boost the modulation speed. While the bandwidth of conventional VCSELs is 9–10 GHz, the 3 dB-bandwidth of the TCC VCSEL is increased by a factor of 3 far beyond the relaxation-oscillation frequency. The maximum bandwidth is currently limited by the photo-detector used in the experiment. Clear 36 Gbps eye opening was attained with an extinction ratio of 4 dB.

This paper presents experimental and modeling results for extending the 3-dB modulation bandwidth of a 980-nm quasi-single-mode (QSM) vertical-cavity surface-emitting laser (VCSEL) with a passive transverse-coupled cavity (TCC). While the bandwidth of a conventional VCSEL is 9 GHz, the 3-dB modulation bandwidth of a QSM TCC VCSEL with the same epi-wafer structure can reach 27 GHz, which is three times larger than the conventional VCSEL without optical feedback. A clear eye opening is obtained for large-signal modulations at 36 Gbps. A numerical simulation for further enhancement of the bandwidth is also conducted.