Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz

Haydl, W.H.; Braunstein, J.; Kitazawa, Takio; Schlechtweg, M.; Tasker, P.J.; Eastman, L.F.

doi:10.1109/mwsym.1992.187984

Cited by 21 publications

(17 citation statements)

References 5 publications

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“…This data leads to a loss in the order of 0.17 dB for a line at 110 GHz (often used in higher harmonic termination). This low value of insertion loss is comparable to those achieved in III-V technologies [17], making the use of low-attenuation CPWs in silicon technology feasible over the full range of microwaves.…”

Section: A Transmission Linesmentioning

confidence: 60%

“…This, however, brings several technological issues in focus that may form bottlenecks, in particular the considerable losses in the conventional silicon substrates [6]. Currently, resistivities of at most [10][11][12][13][14][15][16][17][18][19][20] cm [low-resistivitysilicon(LRS)]arebeingused.Thiscorrespondsto conductivities that lead to considerable substrate losses and, thus, to excessive attenuation of integrated transmission lines [7] and reduced quality factors of on-chip inductors [8]. III-V-based processes have ideal substrates in that respect, but these lack other important properties such as high thermal conductivity and high and frequency-independent permittivity that qualify silicon as a true microwave substrate [7].…”

mentioning

confidence: 99%

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Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper addresses the properties of a surface-passivated (enhanced) high-resistivity silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects of conductive surface channels and their variations across the wafer related to the local oxide and silicon/silicon-dioxide interface quality are eliminated through the formation of a thin amorphous layer at the wafer surface. Without passivation, it is found that the surface channels greatly degrade the quality of passive components in HRS by masking the excellent properties of the bulk HRS substrate and by causing a spread in parameters and peak values across the wafer. Moreover, it is seen that the surface passivation leads to excellent agreement of the characteristics of fabricated components and circuits with those predicted by electromagnetic (EM) simulation based on the bulk HRS properties. This is experimentally verified for lumped (inductors and transformers) and distributed (coplanar waveguide, Marchand balun) passive microwave components, as well as for a traveling-wave amplifier, through which also the integration of transistors on HRS and the overall parameter control at circuit level are demonstrated. The results in this paper indicate the economically important possibility to transfer microwave circuit designs based on EM simulations directly to the HRS fabrication process, thus avoiding costly redesigns.Index Terms-High-resistivity silicon (HRS), inductors, Marchand balun, substrate passivation, transformers, traveling-wave amplifier (TWA).

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Section: A Transmission Linesmentioning

confidence: 60%

mentioning

confidence: 99%

Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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“…As a material with mature technology, silicon is increasingly used for higher frequencies as well, both on standard silicon (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) cm) as well as on high-resistivity silicon ( 1000 cm) [1], [2], [17].…”

Section: Onolithic Microwave Integrated Circuits (Mmic's)mentioning

confidence: 99%

“…Measurements [12], [13] have shown that high-resistivity silicon is nearly as good a substrate for microwave and millimeter-wave MMIC's as GaAs and InP [14].…”

Section: A Effective Permittivitymentioning

confidence: 99%

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Transmission lines and passive elements for multilayer coplanar circuits on silicon

Warns

Menzel

Schumacher

1998

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, propagation properties of both standard and multilayer coplanar lines on different types of silicon substrates, as well as a number of quasi-lumped and stub-type circuit elements, are investigated. For the transmission lines, emphasis is placed on losses. As examples for circuit elements, a lumped parallel resonator and a high-low impedance low-pass filter are demonstrated.

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Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

Simons

2001

Coplanar Waveguide Circuits, Components, and Systems

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CLOSED FORM EQUATIONS FOR CONVENTIONAL CPW ATTENUATION CONSTANTCoplanar waveguide (CPW) circuits fabricated using standard photolithography process on copper-clad soft plastic-like sheets have a conductor thickness t several times the skin depth . Typically this thickness t is on the order of 17 m, which is the result of rolling a half ounce of copper over an area of one square feet [1]. Hence, for deriving an expression for the CPW attenuation constant, the conductors are considered to be electrically very thick and with conductivity the same as that of bulk copper. For the case of thick conductors a simple closed form expression for CPW attenuation constant is derived in [2] using conformal mapping technique.In monolithic microwave integrated circuits the conductor patterns are formed by evaporating or by sputtering precious metal such as gold on the surface of a dielectric substrate. These deposition processes yield conducting films with thickness on the order of a micron. The thickness is then built up to about 2.5 m by an electroplating process. The conductor thickness t in this case is said to be thin and in some cases may be less than or equal to the skin depth at the operating frequency. When t -, the fields penetrate into the conductors and the conductivity inside the conductors can be accounted for by introducing a complex dielectric constant. The CPW attenuation constant for this case is determined using accurate full wave analysis, such as the modematching method [3]. The disadvantage of the mode-matching method is that it requires significant amount of computer resources to carry out the computations. However, closed form expressions that approximate the results of the mode-matching method are also available [4].Besides thickness the cross section of the CPW conductors in MMICs may deviate from the ideal rectangular shape. The shape is strongly dependent on the fabrication process involved. In most cases the shape would be a trapezoid with 60°or 70°angles. The CPW attenuation constant for this case is derived by the modified matched asymptotic expansion technique [5], [6]. In this technique an approximate current density in first assumed on the CPW conductors and an equation for the CPW attenuation constant is derived. This equation involves a contour integral. Instead of evaluating this integral out to the edge of the conductors where the fields are singular, the limits of the integral are taken at some distance just before the edge. This short length before the edge is defined as the stopping distance [6]. Once is determined for a given edge shape as a function of t/ , a closed form expression is derived for the CPW conductor loss in [6]. In the subsections that follow closed form equations based on the foregoing numerical methods as well as measurementbased design equations are presented, and the corresponding computed attenuation constant is compared with measured data.

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Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz

Cited by 21 publications

References 5 publications

Surface-passivated high-resistivity silicon as a true microwave substrate

Surface-passivated high-resistivity silicon as a true microwave substrate

Transmission lines and passive elements for multilayer coplanar circuits on silicon

Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

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