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Ferng, SS; Lin, C. T.; Yang, Kun; Lin, Deng-Sung; Chiang, TC

doi:10.1103/physrevlett.94.196103

Cited by 12 publications

(3 citation statements)

References 26 publications

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“…Figure 6 shows the H 2 desorption under dry inert atmosphere starting at 300°C with a maximum at 480°C which was monitored by the trace of the m/z = 2 signal of the mass spectrometer. This desorption behaviour is in agreement with the results reported by Cheng et al [66] and Ferng et al [65]. Neither the thermogravimetric nor the calorimetric (not shown) signal was sensitive enough to detect the H 2 desorption process.…”

Section: Behaviour Of Nc-si Under Inert Atmospheres At Elevated Tempesupporting

confidence: 92%

“…The temperature for molecular hydrogen desorption from hydrogen terminated silicon surfaces increases with decreasing hydrogen content of the surface species, i.e. SiH 3 < SiH 2 < (Si) 2 HSi-SiH(Si) 2 [65][66][67]. Figure 6 shows the H 2 desorption under dry inert atmosphere starting at 300°C with a maximum at 480°C which was monitored by the trace of the m/z = 2 signal of the mass spectrometer.…”

Section: Behaviour Of Nc-si Under Inert Atmospheres At Elevated Tempementioning

confidence: 99%

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Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity

Sprung

Heimfarth

Erler

et al. 2014

Silicon

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Silicon nanopowders were prepared by hot-wire chemical vapour deposition (CVD) from monosilane. Wire materials including Hf, Nb, Ta, Mo, W, Rh, Re, Ir, Pd, and Pt were tested. The filament temperature was varied in the range of 400 -2000°C and pressures between 1.0 -1.5 bar.Products were characterised by bulk elemental analysis and a laser granulometer. The powders were investigated by TG-DSC-MS under inert, O 2 , and H 2 O containing atmosphere, respectively, in a temperature range of 20 -700°C. Hydrogen evolution occurred in three separate steps, depending on the applied gas atmosphere. The oxidation mechanism was explored by the characteristic O x Si-H bands (x = 0 -3) observed in ex situ DRIFT experiments. The oxidation of hydrogen terminated silicon surfaces was investigated employing oxygen (O 2 ), hydrogen peroxide (H 2 O 2 ), permanganate (MnO − 4 ), or peroxodisulfate S 2 O 2− 8 in a temperature range of 0 -120°C. The oxidation was stepwise and strongly enhanced after pretreatment by alkyl lithium salts or Grignard reagents.

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Section: Behaviour Of Nc-si Under Inert Atmospheres At Elevated Tempesupporting

confidence: 92%

Section: Behaviour Of Nc-si Under Inert Atmospheres At Elevated Tempementioning

confidence: 99%

Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity

Sprung

Heimfarth

Erler

et al. 2014

Silicon

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“…͑5͒, since the concerted recombinative H 2 desorption from adjacent dihydride species leaves two adjacent Si monohydride units. 20 The P coverage P is then given by the expression…”

Section: A P-adsorbed Si"001… Samplesmentioning

confidence: 99%

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

Cho

Bareño

Foo

et al. 2008

Journal of Applied Physics

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The effects of P doping on growth kinetics and surface morphological evolution during Si͑001͒:P gas-source molecular beam epitaxy from Si 2 H 6 and PH 3 at temperatures T s = 500-900°C have been investigated. With increasing PH 3 / Si 2 H 6 flux ratio J P/Si at constant T s , we observe a decrease in the film growth rate R and an increase in the incorporated P concentration C P , both of which tend toward saturation at high flux ratios, which is accompanied by increased surface roughening and pit formation. At constant J P/Si , R increases with increasing T s , while C P initially increases, reaches a maximum at T s = 700°C, and then decreases at higher growth temperatures. We use in situ isotopically tagged D 2 temperature programed desorption ͑TPD͒ to follow changes in film surface composition and dangling bond density db as a function of J P/Si and T s. Measurements are carried out on both as-deposited Si͑001͒:P layers and P-adsorbed Si͑001͒ surfaces revealing ␤ 1 and ␤ 2 peaks due to D 2 desorption from Si monohydride and dihydride species, respectively, as well as the formation of a third peak ␤ 3 corresponding to D 2 desorption from mixed Siu P dimers. Dissociative PH 3 adsorption on Si͑001͒ results in a decrease in db and an initial increase in P surface coverage P with increasing T s. Saturation P values reach a maximum of ϳ1 ML at T s = 550°C, and decrease with T s Ͼ 600°C due to the onset of P 2 desorption. Comparison of P ͑T s ͒ results obtained during film growth with postdeposition C P ͑T s ͒ results reveals the presence of strong P surface segregation. From measurements of P versus C P in Si͑001͒:P layers grown as a function of T s , we obtain a P segregation enthalpy ⌬H s = −0.86 eV. By using the combined set of results, we develop a predictive model for C P versus T s and, J P/Si incorporating the dependence of the PH 3 reactive sticking probability S PH 3 on P , which provides an excellent fit to the experimental data.

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Desorption related to adsorption of hydrogen via detailed balance on the Si(1 0 0) surfaces

Namiki

2006

Progress in Surface Science

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Atomistic View of the Recombinative Desorption ofH2fromH/Si(100)

Cited by 12 publications

References 26 publications

Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity

Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

Desorption related to adsorption of hydrogen via detailed balance on the Si(1 0 0) surfaces

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