Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy

Ohno, Yutaka; Taishi, Toshinori; Yonenaga, Ichiro; Takeda, Seiji

doi:10.1016/j.physb.2007.08.154

Cited by 4 publications

(4 citation statements)

References 17 publications

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“…It can be observed that there exist three-coordination atoms placed periodically in the machined subsurface. Combined with the partial dislocations found under the groove bottom, the partial dislocations that are mainly emitted from the grain boundaries or free surfaces may cause the formation of stacking faults or twinning [ 22 , 23 ]. The stacking faults in the model are not completely dislocated atomic planes but several small areas in the boundary of single crystal and amorphous layer, therefore the partial dislocations exist at the boundaries of stacking faults.…”

Section: Resultsmentioning

confidence: 99%

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Chen

Lai

2021

Nanoscale Res Lett

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During the nano-cutting process, monocrystalline gallium arsenide is faced with various surface/subsurface deformations and damages that significantly influence the product’s performance. In this paper, molecular dynamics simulations of nano-cutting on gallium arsenide are conducted to investigate the surface and subsurface deformation mechanism. Dislocations are found in the machined subsurface. Phase transformation and amorphization are studied by means of coordination numbers. Results reveal the existence of an intermediate phase with a coordination number of five during the cutting process. Models with different cutting speeds are established to investigate the effects on the dislocation. The effect of crystal anisotropy on the dislocation type and density is studied via models with different cutting orientations. In addition, the subsurface stress is also analyzed.

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Section: Resultsmentioning

confidence: 99%

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Chen

Lai

2021

Nanoscale Res Lett

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“…In GaAs doping process, according to the dopant used, both n-type and p-type material can be realized. Silicon is an interesting dopant in GaAs since it acts as a donor or acceptor by occupying the gallium or arsenic site, respectively [11,12]. This amphoteric nature of silicon can expand the flexibility of the device applications [13,14].…”

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confidence: 99%

Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

Şenay

Özen

Pat

et al. 2015

Vacuum

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“…3) It is believed that the SFs deactivate Si donors, since they are negatively charged [4]. On the other hand, it is suggested that the SFs in commercial GaAs:Si (with the Si concentration of the order of 10 18 cm −3 ), which are commonly used for commercial GaAs-based devices, do not exhibit such deactivation, since they are not charged [5]. It is also shown that some point defects coexist nearby the SFs [5], and the defects are speculated to be related to Si, even though the atomistic structure is not elucidated.…”

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confidence: 99%

“…On the other hand, it is suggested that the SFs in commercial GaAs:Si (with the Si concentration of the order of 10 18 cm −3 ), which are commonly used for commercial GaAs-based devices, do not exhibit such deactivation, since they are not charged [5]. It is also shown that some point defects coexist nearby the SFs [5], and the defects are speculated to be related to Si, even though the atomistic structure is not elucidated. This paper shows that the defects include Si donors, agglomerated nearby SFs as theoretically expected [6,7], by means of cross-sectional scanning tunneling microscopy (XSTM).…”

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confidence: 99%

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

Ohno

Taishi

Yonenaga

et al. 2008

Phys. Status Solidi (c)

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Point defects nearby a Frank‐type stacking fault in a commercial GaAs:Si wafer (with the Si concentration of about 1018 cm–3) were examined by ultrahigh‐vacuum cross‐sectional scanning tunneling microscopy (UHVXSTM). The defects were identified as pairs of a Si donor and a Ga vacancy. Even though the pairs were electrically neutral, the Si donors in the pairs might be active when they were in the bulk crystal, since the Ga vacancies in the pairs were considered to be introduced after the UHV‐XSTM specimen preparation. The Si donors might be agglomerated towards the stacking fault, since the Si concentration nearby the stacking fault was rather high in comparison with the surrounding region. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy

Cited by 4 publications

References 17 publications

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

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