Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling microscopy/spectroscopy

Jung, Seong Jun; Jeong, Taehwan; Shim, Jaewoo; Park, Sangwoo; Park, Jin‐Hong; Shin, Bong Gyu; Song, Young Jae

doi:10.1016/j.cap.2018.07.017

Cited by 6 publications

(4 citation statements)

References 39 publications

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“…This structure was previously visualized by X-ray spectroscopy 25,27 and electron microscopy 13 . Early scanning probe microscopies provided also indications of a Re chain structure [28][29][30] . When cleaved, the crystal orientation of the ReS2 flakes is apparent, as they maintain the edges parallel to the rhenium chains.…”

mentioning

confidence: 99%

“…In higher resolution images, presented in Figure 1(d), we observe the characteristic anisotropic lattice structure with elongated chains. One might be tempted to attribute the measured features to the topmost layer of sulfur (S) atoms 30 which is closest to the tip. However, a more accurate interpretation reveals that the contrast in the atomically resolved STM topographic images originates from local density of states (LDOS).…”

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confidence: 99%

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Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

et al. 2020

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Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS2.We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites.These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.

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confidence: 99%

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Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

et al. 2020

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“…Sulfur doping produced element vacancy in GCN QDs and made the surface state of S-GCN QDs different from that of pure GCN QDs. The element vacancy was one of internal structural defects, which were highly correlated with controlling and producing a large range of electronic − and optical properties. , As a result, the ECL efficiency of S-GCN QDs was boost increased from 0.22% to 0.56% ([Ru(bpy) 3 ] 2+ in 0.1 M K 2 S 2 O 8 as a standard, Φ st = 1) . Furthermore, the new ECL peak was generated at 555 nm.…”

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confidence: 99%

Wavelength-Dependent Surface Plasmon Coupling Electrochemiluminescence Biosensor Based on Sulfur-Doped Carbon Nitride Quantum Dots for K-RAS Gene Detection

et al. 2019

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Although graphite phase carbon nitride quantum dots (GCN QDs) showed some advantages in the electrochemiluminescence (ECL) analytical research, the low ECL efficiency limited the potential sensing application. Herein, we synthesized sulfur-doped graphite phase carbon nitride quantum dots (S-GCN QDs) to fabricate a sandwich sensor based on amplified surface plasmon coupling ECL (SPC-ECL) mode. Sulfur doping can change the surface states of QDs effectively and produced new element vacancy. As a result, the ECL efficiency of S-GCN QDs was 2.5× over GCN QDs. Furthermore, compared with the big gap between the ECL peak of GCN QDs (620 nm) and the absorption peak of Au NPs, the doped sulfur elements in S-GCN QDs generated new ECL emission peaks at 555 nm, which was closed to the absorption peak of Au NPs at 530 nm. Due to the wavelength-dependent surface plasmon coupling effect, the ECL peak of S-GCN QDs at 555 nm had greater amplitude of enhancement in the sensing system. The proposed biosensor can quantify the K-RAS gene from 50 fM to 1 nM with a limit of detection (LOD) of 16 fM. We were the first to provide insight into the role of wavelength-dependent surface plasmon coupling in enhancing the sensitivity of ECL biosensor.

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“…69 The S-vacancies in ReS 2 can be attributed to the donor levels close to the CBM edge. 63 Chalcogen vacancy defects in TMDs 70,71 are common due to their low vacancy formation energy compared to metal vacancies. 59 Hence, the dark defects are likely the sulfur monovacancies.…”

Section: Transfer Length Methods (Tlm)mentioning

confidence: 99%

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Bangolla,

Yusuf Fakhri,

Lin

et al. 2023

Nanoscale

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Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling microscopy/spectroscopy

Cited by 6 publications

References 39 publications

Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

Wavelength-Dependent Surface Plasmon Coupling Electrochemiluminescence Biosensor Based on Sulfur-Doped Carbon Nitride Quantum Dots for K-RAS Gene Detection

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

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Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling microscopy/spectroscopy

Cited by 6 publications

References 39 publications

Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

Wavelength-Dependent Surface Plasmon Coupling Electrochemiluminescence Biosensor Based on Sulfur-Doped Carbon Nitride Quantum Dots for K-RAS Gene Detection

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures

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Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures