Atomic ordering in III/V semiconductor alloys

Abstract

The phenomenon of spontaneous atomic scale ordering was first reported for semiconductor alloys only ∼5 years ago. Since that time, ordering has been observed in nearly all III/V alloy systems. This paper will describe the ordered structures observed, as well as the extent of ordering, in specific III/V alloys. The effects of ordering on the fundamental properties will be described briefly. The paper will emphasize a summary of our current understanding of the phenomenon. Both thermodynamic and kinetic factors play a role in determining the degree of order for specific epitaxial growth parameters and on which planes the compositional modulations occur.

Topological Phases inInAs1−xSbx: From Novel Topological Semimetal to Majorana Wire

“…[38]. We found that InP 0.5 Sb 0.5 and GaAs 0.5 Sb 0.5 realize the novel TSM phase reported above for InAs 0.5 Sb 0.5 .…”

“…The CuPt-type ordering is energetically stable in InAs 0.5 Sb 0.5 [51] and has been experimentally observed under various growth conditions [37][38][39][40][41]. We find that this structure also has the biggest enhancement of the SOS (see Supplementary Material [51]).…”

“…We also find that for the latter the spinorbit energy E SO [36] can be as large as 24 meV. Experimental evidence for the CuPt-ordering of InAs 0.5 Sb 0.5 exists [37][38][39][40][41], and we argue that nanowires of this structure can be grown with molecular beam epitaxy.The SOS of the conduction band in zincblende structures is at most cubic in k around the Γ-point [25]. In both III-V materials, the conduction band has a minimum at Γ and an s-like character dictated by T d symmetry.…”

“…We also find that for the latter the spinorbit energy E SO [36] can be as large as 24 meV. Experimental evidence for the CuPt-ordering of InAs 0.5 Sb 0.5 exists [37][38][39][40][41], and we argue that nanowires of this structure can be grown with molecular beam epitaxy.…”

High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)

“…Although the In 1Àx Ga x P/GaAs(001) system can present spontaneous ordering (Kondow et al, 1989;Stringfellow & Chen, 1991) in the [ " 111] and [1 " 11] directions, mainly when x = 0.50, we have con®rmed that the four-beam cases {1 " 1} " 1/ {1 " 1}3, {20}0/{20}2 and {3 " 1} " 1/{3 " 1}3, of the RS chosen to be analysed in this work, are not affected by the ordering effect through the MD re¯ectivity calculation.…”