Atomic Layer Deposition of Amorphous Niobium Carbide-Based Thin Film Superconductors

Klug, Jeffrey A.; Proslier, Thomas; Elam, Jeffrey W.; Cook, R. E.; Hiller, Jon; Claus, H.; Becker, Nicholas; Pellin, Michael J.

doi:10.1021/jp207612r

Cited by 40 publications

(34 citation statements)

References 37 publications

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“…These findings, when combined with the QCM and FTIR measurements, suggest that the TMA reduces the adsorbed MoOF x species to form AlF 3 and metallic Mo. In addition, the C and F presence in the films is similar to that in a previous study which concluded that alternating exposures to niobium pentafluoride and TMA produced films comprised of NbF x , NbC, C, and AlF 3 (12).…”

Section: Resultssupporting

confidence: 81%

(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer Deposition

et al. 2013

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e REBL program, Office of the CTO, KLA-Tencor Corp., Milpitas, CA 95035, USAWe describe the synthesis, characterization, and application of nanocomposite, tunable resistance coatings consisting of conducting, metallic nanoparticles embedded in an amorphous dielectric matrix. These films are comprised of M:Al 2 O 3 with M=Mo or W, and are prepared by atomic layer deposition (ALD) using alternating exposures to trimethyl aluminum and H 2 O for the Al 2 O 3 ALD and alternating MF 6 /Si 2 H 6 exposures for the metal ALD. By varying the ratio of ALD cycles for the metal and the Al 2 O 3 components in the film, we can tune precisely the resistance of these coatings over a very broad range from 10 5 -10 12 Ohm.cm. These films exhibit ohmic behavior and resist breakdown even at high electric fields of 10 7 V/m. Moreover, the self-limiting nature of ALD allows us to grow these films inside of porous substrates and on complex 3D surfaces. As a result of these qualities, our nanocomposite films have proved exceptional as resistive coatings in microchannel plate electron multipliers and as charge drain coatings in electron-optical devices.

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Section: Resultssupporting

confidence: 81%

(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer Deposition

et al. 2013

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“…These findings, when combined with the QCM and FTIR measurements, suggest that the TMA reduces the adsorbed MoOF x species to form AlF 3 and metallic Mo (11). In addition, the C and F presence in the films is similar to that in a previous study which concluded that alternating exposures to niobium pentafluoride and TMA produced films comprised of NbF x , NbC, C, and AlF 3 (13). XPS depth profiling of a 30%W:70% Al 2 O 3 film was performed and the results are shown in (Figure 5c).…”

Section: Resultssupporting

confidence: 79%

“…We utilized these nanocomposite coatings to functionalize capillary glass array plates to fabricate large-area MCPs suitable for application in large-area photodetectors (2,3,13). In addition, we have applied these films as charge drain coatings in MEMS devices for a prototype electron beam lithography tool, and obtained high resolution electron beam patterns without charging artifacts (11,14).…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Nanostructured Tunable Resistance Coatings: Growth, Characterization, and Electrical Properties

et al. 2014

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We have developed atomic layer deposition (ALD) methods to synthesize robust nanostructured composite coatings with tunable resistance comprised of conducting, metallic nanoparticles embedded in an amorphous dielectric matrix. These films are nominally composed of M:Al 2 O 3 where M= W or Mo, and are prepared using alternating exposures to trimethyl aluminum (TMA) and H 2 O for Al 2 O 3 ALD and alternating MF 6 /Si 2 H 6 exposures for the metal ALD. By varying the ratio of ALD cycles for the metal and Al 2 O 3 components in the film, we can precisely adjust the resistivity of these composite coatings over a very broad range (e.g. 10 12 -10 3 Ohm-cm). Furthermore, the self-limiting nature of ALD allows us to grow these nanocomposite films on a variety of complex substrates such as high aspect ratio porous 3D surfaces, MEMS devices, ceramics, grid structures and microchannel plates. Here we present a detailed ALD study of the nanostructured composite resistance coatings including in-situ material growth, microstructural characterization, and electrical measurements.

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“…Jackson et al have attempted to combine the methods discussed above for the deposition of AlF3 by using TMA and TaF5 as precursors [145]. This approach is somewhat questionable, as it has been reported that combining TMA with metal halides generally leads to metal carbide deposition [178][179][180]. In addition, a similar ligand exchange reaction between TMA and TaF5, as was depicted in Equation (2), should produce pentamethyl tantalum which has been reported to be unstable [181,182].…”

Section: Ald Of Metal Fluorides Using Metal Fluorides As the Fluorinementioning

confidence: 99%

Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspective

2018

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Lithium-ion batteries are the enabling technology for a variety of modern day devices, including cell phones, laptops and electric vehicles. To answer the energy and voltage demands of future applications, further materials engineering of the battery components is necessary. To that end, metal fluorides could provide interesting new conversion cathode and solid electrolyte materials for future batteries. To be applicable in thin film batteries, metal fluorides should be deposited with a method providing a high level of control over uniformity and conformality on various substrate materials and geometries. Atomic layer deposition (ALD), a method widely used in microelectronics, offers unrivalled film uniformity and conformality, in conjunction with strict control of film composition. In this review, the basics of lithium-ion batteries are shortly introduced, followed by a discussion of metal fluorides as potential lithium-ion battery materials. The basics of ALD are then covered, followed by a review of some conventional lithium-ion battery materials that have been deposited by ALD. Finally, metal fluoride ALD processes reported in the literature are comprehensively reviewed. It is clear that more research on the ALD of fluorides is needed, especially transition metal fluorides, to expand the number of potential battery materials available.

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Atomic Layer Deposition of Amorphous Niobium Carbide-Based Thin Film Superconductors

Cited by 40 publications

References 37 publications

(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer Deposition

(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer Deposition

Atomic Layer Deposition of Nanostructured Tunable Resistance Coatings: Growth, Characterization, and Electrical Properties

Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspective

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