2013
DOI: 10.1149/05810.0249ecst
|View full text |Cite
|
Sign up to set email alerts
|

(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer Deposition

Abstract: e REBL program, Office of the CTO, KLA-Tencor Corp., Milpitas, CA 95035, USAWe describe the synthesis, characterization, and application of nanocomposite, tunable resistance coatings consisting of conducting, metallic nanoparticles embedded in an amorphous dielectric matrix. These films are comprised of M:Al 2 O 3 with M=Mo or W, and are prepared by atomic layer deposition (ALD) using alternating exposures to trimethyl aluminum and H 2 O for the Al 2 O 3 ALD and alternating MF 6 /Si 2 H 6 exposures for the met… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

5
17
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
5
1

Relationship

2
4

Authors

Journals

citations
Cited by 25 publications
(23 citation statements)
references
References 18 publications
5
17
1
Order By: Relevance
“…For instance, the nanocomposite films in Figs. B and C were synthesized by switching between the ALD precursors for aluminum oxide (A=trimethyl aluminum, B=H2O), and those for tungsten (C=tungsten hexafluoride, D=disilane) 14,[21][22][23] . The metallic nanoparticles form spontaneously through sintering during film growth.…”
Section: (Eq A)mentioning
confidence: 99%
See 1 more Smart Citation
“…For instance, the nanocomposite films in Figs. B and C were synthesized by switching between the ALD precursors for aluminum oxide (A=trimethyl aluminum, B=H2O), and those for tungsten (C=tungsten hexafluoride, D=disilane) 14,[21][22][23] . The metallic nanoparticles form spontaneously through sintering during film growth.…”
Section: (Eq A)mentioning
confidence: 99%
“… Task Results: The ALD W:Al2O3 nanocomposite films were prepared with W cycle percentages ranging from 0-100% W using previously described methods 14,22 . Briefly, the W ALD was performed using alternating exposures to WF6 and Si2H6 and the Al2O3 ALD used alternating exposures to trimethyl aluminum (TMA) and H2O at a temperature of 200°C.…”
Section: Summary Of Tasksmentioning
confidence: 99%
“…The ALD process for each layer is described in Elam et al . [] and Mane and Elam []. Layers of a metal oxide and a metal were applied to the substrate, which could be a glass capillary array.…”
Section: Manufacturing Techniquesmentioning
confidence: 99%
“…ALD is uniquely suited for applying resistive and emissive layers for the fabrication of MCPs, since other conventional thin film coating techniques, such as vacuum evaporation or sputtering are "line of sight" and cannot effectively coat the inside surfaces of high length to diameter ratio (l/d) capillary. The ALD process for each layer is described in Elam et al [2013] and Mane and Elam [2013]. Layers of a metal oxide and a metal were applied to the substrate, which could be a glass capillary array.…”
Section: 1002/2016ja022580mentioning
confidence: 99%
“…A key advantage of ALD is its ability to coat small pores with high L/d ratios. Nanocomposite ALD resistive coatings have been developed that meet all of the requirements for large area MCPs [5,6].…”
Section: Ald Coated Mcpsmentioning
confidence: 99%