Atomic Layer Deposition: An Overview

George, Steven M.

doi:10.1021/cr900056b

Cited by 4,889 publications

(4,465 citation statements)

References 217 publications

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“…8 The most common ALD process is the deposition of Al 2 O 3 from alternating exposures of trimethylaluminium (TMA, Al(CH 3 ) 3 ) and water according to the reaction: 9 2Al(CH 3 ) 3 + 3H 2 O -Al 2 O 3 + 6CH 4 DH = À376 kcal This reaction is thermodynamically highly favourable and works over a large range of temperatures with temperatures between 33 1C and 500 1C demonstrated, making it very reliable and common in the silicon and III-V semiconductor industries. 10,11 However, in the initial step the TMA needs a surface hydroxyl group with which it reacts and the lack of such groups on the TMD's basal plane makes starting the deposition non-trivial; a challenge also encountered with graphene.…”

mentioning

confidence: 99%

“…8 The most common ALD process is the deposition of Al 2 O 3 from alternating exposures of trimethylaluminium (TMA, Al(CH 3 ) 3 ) and water according to the reaction: 9 2Al(CH 3 ) 3 …”

mentioning

confidence: 99%

“…We therefore explore non-covalent functionalisation of TMD basal planes with molecules that contain -OH and -COOH units which can react with TMA and thereby seed the reaction. 8,24 We use a perylene-based anchor unit on our TMDs. 25 This perlyene, shown in Fig.…”

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confidence: 99%

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Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

et al. 2015

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This commmunication presents a study of atomic layer deposition of Al 2 O 3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al 2 O 3 on pristine chemical vapour deposited MoS 2 and WS 2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no deposition on pristine monolayers. In addition, we show that it is possible to reliably seed the deposition, even on the monolayer, using non-covalent functionalisation with perylene derivatives as anchor unit.The integration of transition metal dichalcogenides (TMDs) into existing semiconductor technology is of major interest. 1,2 The synthesis of these materials has been vastly improved over the last few years and many possible devices have been proposed and realised. [3][4][5][6] But to finally achieve their large-scale integration and production, it is necessary to make TMDs fully CMOS processable. One prerequisite for this is the deposition of subsequent layers on top of the TMD for gating and passivation as the performance and stability of TMD based devices hugely depends on their dielectric environment. This task is nontrivial as any impact on the surface of the TMD will result in the destruction of its electronic properties. It has been shown that encapsulation of the 2D material by mechanical deposition of hexagonal boron nitride results in the best preservation of its electronic properties but this approach is not scalable. 7 Other frequently used deposition methods for oxides such as sputtering or plasma-enhanced chemical vapour deposition (PECVD) are not suitable as their application will cause damage to the monolayer.Atomic layer deposition (ALD) is a mild and highly precise technique for thin film deposition, mainly used for depositing gate oxides in integrated circuits. 8 The most common ALD process is the deposition of Al 2 O 3 from alternating exposures of trimethylaluminium (TMA, Al(CH 3 ) 3 ) and water according to the reaction: 9 2Al(CH 3 ) 3 + 3H 2 O -Al 2 O 3 + 6CH 4 DH = À376 kcal This reaction is thermodynamically highly favourable and works over a large range of temperatures with temperatures between 33 1C and 500 1C demonstrated, making it very reliable and common in the silicon and III-V semiconductor industries. 10,11 However, in the initial step the TMA needs a surface hydroxyl group with which it reacts and the lack of such groups on the TMD's basal plane makes starting the deposition non-trivial; a challenge also encountered with graphene. [12][13][14][15] Using ozone instead of water may prove harmful to the oxidation-sensitive TMD layers, though there have been some recent successes. 16 An initial, purely adsorptionbased deposition can be achieved but tends to be dependent on temperature and other factors like underlying electronic structure and is therefore often not entirely reproducible; it has been shown several times that studies may not reproduce results under apparently similar condit...

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mentioning

confidence: 99%

“…8 The most common ALD process is the deposition of Al 2 O 3 from alternating exposures of trimethylaluminium (TMA, Al(CH 3 ) 3 ) and water according to the reaction: 9 2Al(CH 3 ) 3 …”

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confidence: 99%

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Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

et al. 2015

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“…Atomic layer deposition (ALD) is a promising general method for corrosion protection, since it is compatible with many materials and provides well‐controlled surface coatings 13. In contrast to chemical processes, one advantage of ALD is that, because it is a vacuum and gas phase technique, corrosion during the application process can be minimized.…”

Section: Resultsmentioning

confidence: 99%

Corrosion‐Protected Hybrid Nanoparticles

et al. 2017

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Nanoparticles composed of functional materials hold great promise for applications due to their unique electronic, optical, magnetic, and catalytic properties. However, a number of functional materials are not only difficult to fabricate at the nanoscale, but are also chemically unstable in solution. Hence, protecting nanoparticles from corrosion is a major challenge for those applications that require stability in aqueous solutions and biological fluids. Here, this study presents a generic scheme to grow hybrid 3D nanoparticles that are completely encapsulated by a nm thick protective shell. The method consists of vacuum‐based growth and protection, and combines oblique physical vapor deposition with atomic layer deposition. It provides wide flexibility in the shape and composition of the nanoparticles, and the environments against which particles are protected. The work demonstrates the approach with multifunctional nanoparticles possessing ferromagnetic, plasmonic, and chiral properties. The present scheme allows nanocolloids, which immediately corrode without protection, to remain functional, at least for a week, in acidic solutions.

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“…28 Therefore, ALD deposition of alumina (Al 2 O 3 ) onto the nanoporous nanoparticle layers is investigated in order to form a passivation layer. Recently, the same approach was used to passivate germanium nanowires grown on gold nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration

Meric

Mehringer

Karpstein

et al. 2015

Phys. Chem. Chem. Phys.

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In this work we demonstrate the fabrication of germanium nanoparticle (NP) based electronics. The whole process chain from the nanoparticle production up to the point of inverter integration is covered. Ge NPs with a mean diameter of 33 nm and a geometric standard deviation of 1.19 are synthesized in the gas phase by thermal decomposition of GeH 4 precursor in a seeded growth process. Dispersions of these particles in ethanol are employed to fabricate thin particulate films (60 to 120 nm in thickness) on substrates with a pre-patterned interdigitated aluminum electrode structure. The effect of temperature treatment, polymethyl methacrylate encapsulation and alumina coating by plasma-assisted atomic layer deposition (employing various temperatures) on the performance of these layers as thin film transistors (TFTs) is investigated. This coating combined with thermal annealing delivers ambipolar TFTs which show an I on /I off ratio in the range of 10 2 . We report fabrication of n-type, p-type or ambipolar Ge NP TFTs at maximum temperatures of 450 1C. For the first time, a circuit using two ambipolar TFTs is demonstrated to function as a NOT gate with an inverter gain of up to 4 which can be operated at room temperature in ambient air.

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Atomic Layer Deposition: An Overview

Cited by 4,889 publications

References 217 publications

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

Corrosion‐Protected Hybrid Nanoparticles

Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration

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