Silver nanowire (AgNW) networks show excellent optical, electrical, and mechanical properties, which make them ideal candidates for transparent electrodes in flexible and stretchable devices. Various coating strategies and testing setups have been developed to further improve their stretchability and to evaluate their performance. Still, a comprehensive microscopic understanding of the relationship between mechanical and electrical failure is missing. In this work, the fundamental deformation modes of five-fold twinned AgNWs in anisotropic networks are studied by large-scale SEM straining tests that are directly correlated with corresponding changes in the resistance. A pronounced effect of the network anisotropy on the electrical performance is observed, which manifests itself in a one order of magnitude lower increase in resistance for networks strained perpendicular to the preferred wire orientation. Using a scale-bridging microscopy approach spanning from NW networks to single NWs to atomic-scale defects, we were able to identify three fundamental deformation modes of NWs, which together can explain this behavior: (i) correlated tensile fracture of NWs, (ii) kink formation due to compression of NWs in transverse direction, and (iii) NW bending caused by the interaction of NWs in the strained network. A key observation is the extreme deformability of AgNWs in compression. Considering HRTEM and MD simulations, this behavior can be attributed to specific defect processes in the five-fold twinned NW structure leading to the formation of NW kinks with grain boundaries combined with V-shaped surface reconstructions, both counteracting NW fracture. The detailed insights from this microscopic study can further improve fabrication and design strategies for transparent NW network electrodes.

In this work we demonstrate the fabrication of germanium nanoparticle (NP) based electronics. The whole process chain from the nanoparticle production up to the point of inverter integration is covered. Ge NPs with a mean diameter of 33 nm and a geometric standard deviation of 1.19 are synthesized in the gas phase by thermal decomposition of GeH 4 precursor in a seeded growth process. Dispersions of these particles in ethanol are employed to fabricate thin particulate films (60 to 120 nm in thickness) on substrates with a pre-patterned interdigitated aluminum electrode structure. The effect of temperature treatment, polymethyl methacrylate encapsulation and alumina coating by plasma-assisted atomic layer deposition (employing various temperatures) on the performance of these layers as thin film transistors (TFTs) is investigated. This coating combined with thermal annealing delivers ambipolar TFTs which show an I on /I off ratio in the range of 10 2 . We report fabrication of n-type, p-type or ambipolar Ge NP TFTs at maximum temperatures of 450 1C. For the first time, a circuit using two ambipolar TFTs is demonstrated to function as a NOT gate with an inverter gain of up to 4 which can be operated at room temperature in ambient air.

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The deformation mechanisms operating in superalloys depend on different parameters such as composition, temperature and deformation rate. So far, the transition from shearing by APB-coupled dislocations to shearing under the formation of stacking faults has been studied exclusively as a function of temperature but not as a function of the strain rate. Therefore, interrupted compression tests with strain rates between 10–3 s−1 and 10–5 s−1 were performed on the single-crystalline CoNi-base superalloy ERBOCo-4 at a temperature of 850 °C. The evolution of the defect structures has been analyzed by conventional transmission electron microscopy. A change of the deformation mechanism from APB-coupled dislocation shearing to stacking fault shearing is found to depend on the strain rate. At lower strain rates, an increased stacking fault density is associated with a higher yield strength and higher work hardening rates at the early stages of plastic deformation due to a very high stacking fault density. After approximately 2.0 pct plastic strain, the stress reaches a plateau and decreases subsequently, which is associated with the formation and thickening of twins as shown by high-resolution scanning transmission electron microscopy. At higher strain rates, the work hardening rate is significantly lower in the early deformation stage. The role of segregation to planar defects and the influence of local phase transformations (LPT) at SESFs is further discussed in reference to the influence of the strain rate. The segregation of W as an η stabilizing element is found to be crucial for the formation of a local phase transformation in ERBOCo-4. At higher strain rates the phase transformation is hindered by insufficient W segregation, resulting in a higher twin density.