Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles

Abstract

The atomic arrangements of two types of InAs dislocation cores associated by a Z-shape faulted dipole are observed directly by aberration-corrected high-angle annular-dark-field imaging. Single unpaired columns of different atoms in a matrix of dumbbells are clearly resolved, with observable variations of bonding lengths due to excess Coulomb force from bare ions at the dislocation core. The corresponding geometric phase analysis provides confirmation that the dislocation cores serve as origins of strain field inversion while stacking faults maintain the existing strain status.

Polarity continuation and frustration in ZnSe nanospirals

“…The atomic structure of the central stacking faults of a Z-shape faulted dipole in deformed GaAs was determined based on HRTEM imaging and image simulations 21 . The atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles were observed directly using aberration-corrected HAADF imaging 22 . Figure 3a is aberration-corrected HAADF image of a typical Z-shape faulted dipole within ZnSe nanospiral.…”

“…When gliding in the (−111) stacking fault plane, the latter partial dislocation would transform the intrinsic stacking fault into an extrinsic stacking fault. The formation mechanism could be expressed applying Thompson's notation as: Cδ → Cα + αδ, which resembles the case of dislocation core formation in InAs nanopillars 22 .…”

Strain‐Induced Modulation of Localized Surface Plasmon Resonance in Ultrathin Hexagonal Gold Nanoplates

“…[ 37,38 ] However, the interiors of the hcp domains (bottom) shown in the R1 and R2 regions are free of defects. Higher‐magnification TEM images (Figure 4d,e), obtained from the boxed regions denoted as M and N in Figure 4b,c demonstrate more clearly that dislocation cores [ 39 ] (cyan arrows in Figure 4e) in the Z‐shaped faulted dipole are formed at the intersections of the three intrinsic SFs 1 on the (111) plane and the one extrinsic SF 2 on the (−1−11) plane. The locations of the dislocation cores are confirmed more accurately by the lattice‐fringe shifts of the FFT‐filtered image (Figure S9, Supporting Information).…”

“…Interestingly, closer inspection of the strain map around the Z‐shaped faulted dipole (inset of Figure 4g) revealed the local strain variation of ε xx that alternately changes between positive and negative (strain inversion) as it passes across the dislocation cores (arrows). [ 39 ] It is expected that the strain field inversion at the dislocation cores contributes to the formation of high tensile (positive) strain ε xx around the Z‐shaped faulted dipole. Together, these data provide strong evidence that the Z‐shaped faulted dipole formed in the fcc domain leads to the large tensile (positive) strain, and plays an important role in the asymmetric ε xx distribution on both side edges of the Au NPL.…”

Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires

“…The past decade has seen an exponential rise in the research into the phase-controlled synthesis of one-dimensional II–VI semiconductors, − as driven by the increasing technological demands for versatile and durable high-performance electronic and photonic materials. ,− To achieve this, a full picture of the growth kinetics and phase selection mechanism is desperately needed . The seed-catalyzed growth of nanowire (NW) is an ideal system for investigation, whereas multiple (meta)­stable phases, such as the wurtzite (WZ) and zinc blende (ZB) structures with a wealth of physical properties can nucleate by simply tuning the growth conditions (source-material flux ratio, catalyst geometry, etc.…”