Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

Shimizu, Yasuo; Kawamura, Yōko; Uematsu, Masashi; Itoh, Kohei M.; Tomita, Mitsuhiro; Sasaki, Michiko; Uchida, Hiroshi; Takahashi, Mamoru

doi:10.1063/1.3236673

Cited by 33 publications

(17 citation statements)

References 42 publications

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“…Although the technique is established already since several decades for metallurgical applications, it has only recently gained the interest of the semiconductor industry with the advent of atom probes employing laser stimulated evaporation. Whereas some interesting applications have been reported in literature, it has become clear that the lasersemiconductor interaction is still rather poorly understood and is still required [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Atom probe analysis of a 3D finFET with high-k metal gate

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Atom probe analysis of a 3D finFET with high-k metal gate

et al. 2011

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“…11 In our analyses, employing UV-assisted LEAP ͓Fig. It was demonstrated that green laserassisted APT yields isotopic concentration profiles with a decay length of 2.1 nm/decade.…”

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confidence: 80%

Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Moutanabbir

Isheim

Seidman

et al. 2011

Applied Physics Letters

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Articles you may be interested inDepth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures J. Appl. Phys. 109, 036102 (2011); 10.1063/1.3544496Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si 28 ∕ Si 30 isotope superlattices with sub-nanometer spatial resolution Structural and electronic differences between deuterated and hydrogenated amorphous silicon

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“…These depth profiles ( 28 Si, 29 Si, and 30 Si) were prepared from the columnar volume (Ø 25 nm Â 100 nm depth) obtained from the three-dimensional AP analysis data. 14,15 The AP depth profile in Fig. The depth profile of 28 Si was used as the original depth profile of sample A for evaluation of the SIMS depth resolution function described hereafter because AP analysis has been reported to provide a higher depth resolution than SIMS even when a low-energy primary ion is used for SIMS measurements.…”

Section: Methodsmentioning

confidence: 99%

Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers

Tomita

Koike

Akutsu

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In order to identify their controlling factors, the depth resolution parameters for secondary ion mass spectrometry, which include the decay length and the standard deviation of the Gaussian function (also referred to as the depth resolution function), for silicon atoms in a silicon matrix with silicon-isotope multiple layers were investigated under oxygen (O þ 2 ) and cesium (Cs þ ) ion bombardments with a wide ion energy range (from 200 eV to 10 keV) and with several incident angles. The use of silicon-isotope multiple layers in this investigation eliminated the chemical segregation effect caused by the sample composition. Measures were also taken to prevent ripple formation on the sputtered sample surface. The obtained depth resolution parameters were proportional to E 1/2 cos h, where E is the primary ion energy per atom and h is the incident angle relative to the surface normal. The relationships for decay length and standard deviation were different for the Cs þ ion, the O þ 2 ion with full oxidization, and the O þ 2 ion without full oxidization. The damage depth was measured by high-resolution Rutherford backscattering spectrometry and it was found that the relationships of the standard deviation versus damage depth depend only on the damage depth with a small dependence on the ion species (O þ 2 =Cs þ ). The degree of mixing near the sputtered surface of thin silicon-isotope multiple layers bombarded by O þ 2 =Cs þ ions was measured using laser-assisted atom probe analysis, and the relationship of the degree of mixing with the depth resolution parameters indicated that the decay length was degraded according to the degree of mixing. Atomic mixing/sputtering simulations revealed the factors determining the depth resolution parameters for secondary ion mass spectrometry. The standard deviation is found to be mainly degraded by the damage depth, which agrees with the results obtained by Rutherford backscattering spectrometry, whereas the decay length is mainly extended by the variance of the damage density profile, which is a parameter of the Gaussian function and governs the degree of mixing near the surface.

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Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

Cited by 33 publications

References 42 publications

Atom probe analysis of a 3D finFET with high-k metal gate

Atom probe analysis of a 3D finFET with high-k metal gate

Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers

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