Atom probe analysis of a 3D finFET with high-k metal gate

Gilbert, M.; Vandervorst, Wilfried; Koelling, Sebastian; Kambham, Ajay Kumar

doi:10.1016/j.ultramic.2010.12.025

Cited by 42 publications

(25 citation statements)

References 17 publications

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“…The evaporation voltage thresholds of these three deposits compared to that of silicon provided the evaporation fields (SiO 2 : 43 V/nm, HfO 2 : 51 V/nm, TiN: 38 V/nm) that were the input data of simulations. Simulated reconstructions revealed pronounced variations of local radius in the vicinity of interfaces and were of great help for the identification of origins of image distortions [46]. Local magnification effects are known to lead to modulations of atomic density.…”

Section: -P9mentioning

confidence: 95%

“…The feasability of analysing well-established technologies such as MOS transistor [45], and more exotic structures such as FinFETs [46] or gate all aroud transistors (GAA) has been already demonstrated [47]. However, these structures nowadays contain a wide variety of materials that may have very different evaporation fields.…”

Section: Distribution Of Dopants Within a P-mos Devicementioning

confidence: 99%

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Atom probe tomography in nanoelectronics

Blavette

Duguay

2014

Eur. Phys. J. Appl. Phys.

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Abstract. The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.

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Section: -P9mentioning

confidence: 95%

Section: Distribution Of Dopants Within a P-mos Devicementioning

confidence: 99%

Atom probe tomography in nanoelectronics

Blavette

Duguay

2014

Eur. Phys. J. Appl. Phys.

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“…[10][11][12] In APT measurements, especially for device structures, sample preparation is extremely important. A needle-shaped specimen having an apex with a 50-100 nm radius must be prepared in order to allow field evaporation of atoms under a combination of a strong electric field and pulsed-laser irradiation.…”

mentioning

confidence: 99%

“…To reduce the possibility of specimen fracture in several of the previous APT studies of these fin structures, the trenches were usually filled using in-line processing just after fin-array formation without exposure to air. [10][11][12] Therefore, APT measurement of actual FinFETs that were not specifically prepared for APT measurement is challenging, but necessary.…”

mentioning

confidence: 99%

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

Shimizu

Nozawa

Toyama

et al. 2012

Applied Physics Letters

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Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 × 1020 atoms/cm3 at the fin sidewall.

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“…[9][10][11][12] Moreover, recent papers have demonstrated the feasibility of atom probe analysis of HK-MG stacks and the good reproducibility of these measurements. 13,14 In this work, the transistor V TH shift and the 3D element redistribution in the HK-MG stack after a 1050 C annealing are determined, respectively, by drain current versus gate voltage (I D (V G )) and APT measurement. Experimental evidences of the correlation between the Al distribution and the V TH shift are provided, and the main features of the observed phenomenon are discussed with respect to what is known in literature.…”

mentioning

confidence: 99%

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

Panciera

Baudot

Hoummada

et al. 2012

Applied Physics Letters

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Articles you may be interested inAbnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors Impact of both metal composition and oxygen/nitrogen profiles on p-channel metal-oxide semiconductor transistor threshold voltage for gate last high-k metal gate J. Vac. Sci. Technol. B 31, 022202 (2013); 10.1116/1.4789424 High-k metal-gate PMOS FinFET threshold voltage tuning with aluminum implantation AIP Conf. Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks J. Appl. Phys. 111, 054110 (2012); 10.1063/1.3684709 Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

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Atom probe analysis of a 3D finFET with high-k metal gate

Cited by 42 publications

References 17 publications

Atom probe tomography in nanoelectronics

Atom probe tomography in nanoelectronics

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

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