2011
DOI: 10.1063/1.3531816
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Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Abstract: Articles you may be interested inDepth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures J. Appl. Phys. 109, 036102 (2011); 10.1063/1.3544496Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si 28 ∕ Si 30 isotope superlattices with sub-nanometer spatial resolution Structural and electronic differences between deuterated and hydrogenated amorphous silicon

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Cited by 40 publications
(35 citation statements)
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“…Values stated in the table represent the reciprocal of the slope. We also tested alternative possibilities of profile fitting, as for example spline-fitting 11 or error functions. Because of the difficulty in separating the Cu(Ni) alloy from the interface (see composition profile of the annealed sample in Fig.…”
Section: -mentioning
confidence: 99%
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“…Values stated in the table represent the reciprocal of the slope. We also tested alternative possibilities of profile fitting, as for example spline-fitting 11 or error functions. Because of the difficulty in separating the Cu(Ni) alloy from the interface (see composition profile of the annealed sample in Fig.…”
Section: -mentioning
confidence: 99%
“…Accurate analysis of multilayer interfaces with APT is nowadays well established 5 even with isotope multilayers. 10,11 The goal of this work is to verify the kinetic interface sharpening 6,7 by a truly atomistic method, by which the interface diffuseness can be clearly separated from any other phenomena. We chose the Ni/Cu system since it is miscible at the 773 K annealing temperature, well known to have an asymmetry in partial mobilities, and representing one of the earliest demonstrations of a Kirkendall-shift 12 and a nonFickian dissolution kinetics, 13 too.…”
mentioning
confidence: 99%
“…Therefore, a study of the UV laser's interaction with UO 2 is of key importance to understand how UO 2 performs in APT. Recent literature has reported a correlation between the wavelength of the laser and the band gap of the material and a consequent effect on the evaporation characteristics [27][28][29][30]. For the laser to assist in evaporation, its photon energy must be greater to or equal to the band gap energy the material to obtain full absorbance of the laser energy.…”
Section: Methodsmentioning
confidence: 98%
“…Isotopic modulation of silicon nanowires has already been demonstrated in Ref. 77. Additional electrostatic gates make it possible to localize a single electron with wavefunction centered at the island of nuclear spins, see Fig.…”
Section: -74mentioning
confidence: 99%