Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO ₃ thin films

Abstract

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO 3 3 3 thin films *Zhang Fei(张 飞) a) , Lin Yuan-Bin(林远彬) a) , Wu Hao(吴 昊) a) , Miao Qing(苗 青) a) , Gong Ji-Jun(巩纪军) a) , Chen Ji-Pei(陈继培) a) , Wu Su-Juan(吴素娟) a) , Zeng Min(曾 敏) a) , Gao Xing-Sen(高兴森) a) † , and Liu Jun-Ming(刘俊明) b) ‡

Configurable Resistive Response in BaTiO3 Ferroelectric Memristors via Electron Beam Radiation

“…Notably, under the tested conditions of EBD and accelerating voltage, the resistance of BTO varied quasi‐continuously over two orders of magnitude. The variation in BTO resistance driven by e‐beam effect is lower than the ON/OFF ratio of about 10 3 achieved in other memristive devices with similar thickness of the FE material 17,27,42. However, the values of voltage involved in the present I / V curves are about one order of magnitude lower than in those reports.…”

Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures

“…The ferroelectric RS effect has been revealed in many ferroelectric thin films − and ferroelectric tunneling junctions (FTJs) based on ferroelectric ultrathin films. − Although the FTJs have been reproducibly demonstrated to present a remarkable resistive switching effect, the thickness requirement of the ferroelectric layer to be several nanometers greatly limits the potential applications . In addition, for typical ferroelectric ultrathin films, large lattice mismatch, size effect, and structural defects could damage the ferroelectricity and cause a large leakage current, which could make the switching signal unreadable. , On the other hand, excellent electric properties such as high ON/OFF ratio, good retention, and high endurance have been reported in relatively thick ferroelectric thin films, such as BiFeO 3 (BFO), , Pb­(Zr x Ti 1– x )­O 3 (PZT), , and BaTiO 3 (BTO). , For instance, Tsurumaki et al fabricated Pt/BFO (100 nm)/SrRuO 3 (SRO) layered structures on SrTiO 3 (STO) single-crystal substrates, and showed a ON/OFF ratio of above 1000. Hu et al reported a continuously tunable ON/OFF ratio up to 5000 in Pt/BFO (60 nm)/Nb-doped STO (NSTO) structure, which was attributed to the ferroelectric polarization modulation of the width of depletion layer at the BFO/NSTO interface.…”

“…7,11 On the other hand, excellent electric properties such as high ON/OFF ratio, good retention, and high endurance have been reported in relatively thick ferroelectric thin films, such as BiFeO 3 (BFO), 12,13 Pb(Zr x Ti 1−x )O 3 (PZT), 14,15 and BaTiO 3 (BTO). 4,16 For instance, Tsurumaki et al 12 fabricated Pt/BFO (100 nm)/ SrRuO 3 (SRO) layered structures on SrTiO 3 (STO) singlecrystal substrates, and showed a ON/OFF ratio of above 1000. Hu et al 13 reported a continuously tunable ON/OFF ratio up to 5000 in Pt/BFO (60 nm)/Nb-doped STO (NSTO) structure, which was attributed to the ferroelectric polarization modulation of the width of depletion layer at the BFO/NSTO interface.…”

Light-controlled resistive switching of ZnWO4 nanowires array

“…[1][2][3][4][5][6] The resistive switching effects of a large variety of binary and ternary oxides have being investigated in the past years, such as SnO 2 , 2 TiO 2 , 7 ZnO, 8,9 NiO, 10 Cu 2 O, 11 BiFeO 3 , 1, 12 BaTiO 3 , 13,14 SrTiO 3 15,19 and SrZrO 3 . 16,17 Generally, the memory devices are switched between a high resistance states (HRS) and a low resistance states (LRS) by applying voltage pulses, which is defined as resistive switching.…”