Light-controlled resistive switching of ZnWO4 nanowires array

Zhao, Wenxi; Sun, Bai; Liu, Y. H.; Wei, Lujun; Li, H. W.; Chen, P.

doi:10.1063/1.4891461

Cited by 14 publications

(1 citation statement)

References 30 publications

(41 reference statements)

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“…The light-induced enhancement of RS in ZnWO 4 nanowires was reported in [11]. Under the illumination, the photogenerated electrons are trapped by the V O s at the interface of ZnWO 4 with Ti electrode that leads to the reduction of the depletion region of the ZnWO 4 /Ti Schottky barrier and enlargement of the conduction region in ZnWO 4 .…”

Section: Introductionmentioning

confidence: 90%

A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles

Novikov¹,

Филатов²,

Шенина³

et al. 2021

J. Phys. D: Appl. Phys.

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A mechanism of effect of optical excitation on resistive switching of dielectric films with embedded metal nanoparticles (MNPs) has been proposed. The mechanism is related to a charging of the MNPs due to internal photoemission of electrons from the MNPs, which results in an increasing of the electric field strength at the MNP surfaces that, in turn, promotes the rupture and restoring of the conductive filaments in the dielectric film. The increasing of the electric filed strength due to the MNP charging as a function of the MNP sizes and positions inside the dielectric films was evaluated using a simple model taking into account the mirror charges on the conductive electrodes of a memristor stack. The single electron charging was found to be essential at small MNP radii (∼1 nm). The proposed mechanism was confirmed experimentally by studying the photoexcitation-induced charging of Au MNPs (with average radius 1.6-1.8 nm) embedded into a 10 nm thick ZrO 2 (Y) film by Kelvin probe force microscopy.

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Section: Introductionmentioning

confidence: 90%

A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles

Novikov¹,

Филатов²,

Шенина³

et al. 2021

J. Phys. D: Appl. Phys.

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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

108

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Memristive devices are considered one of the most promising candidates to overcome technological limitations for realizing next‐generation memories, logic applications, and neuromorphic systems in the modern nanoelectronics and information technology. Despite the continuous efforts, understanding the resistive switching mechanism underlying memristive/neuromorphic behavior still represents a challenge. Metal oxide nanowire‐based memristors appear suitable model systems for a deeper understanding of the involved physical/chemical phenomena due the possibility for localizing and investigating the switching mechanism. In practical aspects, nanowire‐based devices can be grown using a bottom‐up approach, thus being considered reliable candidates for going beyond the current scaling limitations of the top‐down approach by the standard lithography. In addition, taking into advantage of the high surface‐to‐volume ratio of these nanostructures, new device functionalities can be achieved by exploiting surface effects. In the literature, a variety of nanowire‐based devices such as single nanowires, nanowire arrays, and networks are reported to exhibit memristive behavior, explained by different switching mechanisms. This work provides a comparative review and a comprehensive analysis of device performances and physical phenomena responsible for memristive and neuromorphic behavior in such nanostructures. The analysis of the state‐of‐art of memristor devices based on nanowires and nanorods represent a milestone toward the development of nanowire‐based artificial neural networks.

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Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

Sun

Zhao

et al. 2014

Nano-Micro Lett.

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In this work, BaWO4 nanospheres were successfully prepared by hydrothermal process. The bipolar resistive switching behavior of Ag/BaWO4/FTO device is observed. Moreover, this resistive switching behavior can be modulated by white light. The device can maintain superior stability in the dark and under white-light illumination. This study is useful for developing the light-controlled nonvolatile memory devices.

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Light-controlled resistive switching of ZnWO4 nanowires array

Cited by 14 publications

References 30 publications

A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles

A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

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Light-controlled resistive switching of ZnWO4 nanowires array

Cited by 14 publications

References 30 publications

A mechanism of effect of optical excitation on resistive switching in ZrO2(Y) films with Au nanoparticles

A mechanism of effect of optical excitation on resistive switching in ZrO2(Y) films with Au nanoparticles

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

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A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles

A mechanism of effect of optical excitation on resistive switching in ZrO₂(Y) films with Au nanoparticles