Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

Sun, Bai; Y, Liu; Zhao, Wenxi; Wu, Jinggao; Chen, Peng

doi:10.1007/s40820-014-0021-5

Cited by 31 publications

(9 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Barium tungstate (BaWO 4 ) crystals have attracted significant interest from many research groups due to their potential applications in scintillation devices, batteries, capacitors, photocatalysts, and, in particular, photoluminescent materials [1][2][3][4][5][6]. In recent years, various synthetic methods have been used to produce BaWO 4 crystals, such as co-precipitation (CP), sol-gel, modified Pechini, solid state reaction, solution route, Czochralski, sonochemical, and hydrothermal techniques [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and morphological transformation of BaWO4 crystals: Experimental and theoretical insights

Oliveira

Gracia

Nogueira

et al. 2016

Ceramics International

View full text Add to dashboard Cite

BaWO 4 crystals have been obtained by a co-precipitation method, and their structures were characterized by X-ray diffraction and Rietveld refinement techniques, while field emission scanning electron microscopy was utilized to investigate the morphology of the as-synthesized aggregates. Geometries, bulk electronic properties, surface energies, and surface tension of the obtained BaWO 4 crystals were evaluated using first-principles quantum mechanical calculations. A theoretical model based on the Wulff construction was introduced to explain possible crystal morphologies by tuning their surface chemistry, which is related to the relative stability of the faceted crystals. Both the experimental and theoretical data revealed the presence of (112), (001), and (100) facets with low values of surface energy in the BaWO 4 crystals. The experimental morphologies of the as-synthesized samples are similar to the theoretically obtained shapes when surface energy values for the (001) and (100) surfaces are increased simultaneously.

show abstract

Section: Introductionmentioning

confidence: 99%

Synthesis and morphological transformation of BaWO4 crystals: Experimental and theoretical insights

Oliveira

Gracia

Nogueira

et al. 2016

Ceramics International

View full text Add to dashboard Cite

show abstract

“…Various materials like HfO x [ 4 ], TaO x [ 5 , 6 ], TiO x [ 7 – 10 ], and so on have been reported by many groups. Other materials such as ZnO [ 11 ], BaWO 4 [ 12 ], and so on have been reported also. Among of them, TiO x is one of the most promising materials owing to its fab-friendly, good thermal stability, adequate band gap (~3.0 eV) for low leakage, high dielectric constant (κ ~ 80), and so on [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

et al. 2015

View full text Add to dashboard Cite

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

show abstract

“…20 Other binary and ternary oxides have also shown an extra degree of freedom in resistive states under controlled illumination of light, which may be a signi-cant development in the eld of information and NVRAM technology. [21][22][23] On the other hand, devices directly integrated on Si is highly sensitive to the illumination of moderate light intensity which partially or permanently changes the band offset alignment and creates photon assisted trap levels near the different interface. To understand the basic physics, band alignment behavior, reproducibility, and device life time, it is due to have methodical investigation on the functional properties of HfO 2 -SiO 2 /Si heterostructures under different light ambient condition.…”

Section: Introductionmentioning

confidence: 99%

Light assisted irreversible resistive switching in ultra thin hafnium oxide

et al. 2015

View full text Add to dashboard Cite

An ultra thin film ($5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitancevoltage behavior. A unique resistance switching was observed under illumination of 15-60 mW light. In the first cycle, the light assisted switching provide a 10 4 : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.

show abstract

Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

Cited by 31 publications

References 33 publications

Synthesis and morphological transformation of BaWO4 crystals: Experimental and theoretical insights

Synthesis and morphological transformation of BaWO4 crystals: Experimental and theoretical insights

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

Light assisted irreversible resistive switching in ultra thin hafnium oxide

Contact Info

Product

Resources

About