The potential in a synaptic simulation for neuromorphic computation has revived the research interest of resistive random access memory (RRAM). However, novel applications require reliable multilevel resistive switching (RS), which still represents a challenge. We demonstrate in this work the achievement of reliable HfO 2 -based RRAM devices for synaptic simulation by performing the Al doping and the postdeposition annealing (PDA). Transmission electron microscopy and operando hard X-ray photoelectron spectroscopy results reveal the positive impact of Al doping on the formation of oxygen vacancies. Detailed I−V characterizations demonstrate that the 16.5% Al doping concentration leads to better RS properties of the device. In comparison with the other reported results based on HfO 2 RRAM, our devices with 16.5% Aldoping and PDA at 450 °C show better reliable multilevel RS (∼20 levels) performance and an increased on/off ratio. The 16.5% Al:HfO 2 sample with PDA at 450 °C shows good potentiation/depression characteristics with low pulse width (10 μs) along with a good On/Off ratio (>1000), good data retention at room temperature, and high temperature and good program/erase endurance characteristics with a pulse width of 50 ns. The synapse features including potentiation, depression, and spike time-dependent plasticity were successfully achieved using optimized Al-HfO 2 RRAM devices. Our results demonstrate the beneficial effects of Al doping and PDA on the enhancement of the performances of RRAM devices for the synaptic simulation in neuromorphic computing applications.

O3-based interface engineering dominates implementations of analog memory and synaptic simulation using reliable Pt/HfO2/TiN RRAM.

The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based material has opportunity to have better endurance as compared to an oxide-based material, data retention and integration with the complementary metal-oxide-semiconductor (CMOS) process are also issues. Devices with bilayer switching materials show better resistive switching characteristics as compared to those with a single switching layer, especially a program/erase endurance of >105 cycles with a high speed of few nanoseconds. Multi-level cell operation is possible, but the stability of the high resistance state is also an important reliability concern. These devices show a good data retention of >105 s at >85°C. However, more study is needed to achieve a 10-year guarantee of data retention for non-volatile memory application. The crossbar memory is benefited for high density with low power operation. Some CBRAM devices as a chip have been reported for proto-typical production. This review shows that operation current should be optimized for few microamperes with a maintaining speed of few nanoseconds, which will have challenges and also opportunities for three-dimensional (3D) architecture.

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrOx/TiOx/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiOx with 4-nm-thick polycrystalline CrOx layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1–8 µm) owing to reduction of leakage current through the TiOx layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer. Long read pulse endurance of >105 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.

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Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm2 have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 105 cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >104.

Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/Ge4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge0/Ge4+ are confirmed by both XPS and H2O2 sensing of GeOx membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >106 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeOx layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 106 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeOx membrane by sensing 1 nM H2O2, which is owing to the change of oxidation states from Ge0 to Ge4+ because of the enhanced O2− ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.