Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode

Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

“…Our case the obtained dielectric constant is lying between that of SiO2 to Si. This is because the E-gun deposited SiO2 is highly defective as we had mentioned in our earlier report [10], so it is not SiO2 rather it is SiOx, where x<2. Also noted that as ES10 is has higher 𝑽𝑶 so the dielectric constant of ES10 is much closer to the same for Si.…”

“…Later on in some other works we had reported even low CC operation around 30 μA and >10 9 P/E cycles by reducing SiOx thickness to 4 nm [10].…”

“…Although different transitional metal oxides are used as switching material (SM) of RRAM devices such as TaOx [3,4], HfOx [5,6], TiOx [7], etc. but the reports with SiOx is less [8][9][10]. Previously some reports [11][12][13] showed that thickness enhancement can cause several performance degradations such as increase in set voltage hence power consumption enhancement [11], or decrease in high resistance state (HRS) and switching uniformity [12], or abrupt switching, degraded HRS and poor reliability [13] are some key effects of thickness enhancement.…”

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

“…The resistive switching characteristics in a metal–insulator–metal structure have been shown keen attention for next-generation resistive random access memory (RRAM) to change the conventional nonvolatile memory in future. Considering all emerging nonvolatile memories, intensive research and development of RRAM have been triggered owing to its simple structure, small size feature, low power consumption, ultrafast switching speed, and impressive retention capability than those of others. , Several research groups have chosen various materials that possess resistive switching characteristics, such as HfO x , , TaO x , , SiO 2 , , Al 2 O 3 , etc . Among them, TaO x is considered as one of the most important materials owing to its compatibility to complementary metal-oxide-semiconductor application, higher thermal stability up to 1000 °C, high dielectric constant ( k ∼ 16–60), moderate Gibbs free energy (−760.5 kJ/mol at 300 K), metastable phase of TaO 2 , and stable phase of Ta 2 O 5 . ,,− Recently, molybdenum disulfide (MoS 2 ) as inorganic transition-metal dichalcogenide has drawn much attention in the resistive switching memory application due to some of its distinctive features, like variable band gap semiconductor ( E g ∼ 1.23 eV for indirect band gap with bulk MoS 2 and E g ∼ 1.8 eV for direct band gap with monolayer MoS 2 ), high electron affinity (χ MoS 2 ∼ 4.3 eV), a wide range of the dielectric constant ( k ∼ 4–17), composition of covalently bonded S–Mo–S structures, and chemical inertness. − Recently, the RRAM device including MoS 2 switching material (SM) has been reported by a few groups. − Bessonov et al have reported the bipolar resistive switching (BRS) by using Ag/MoO x /MoS 2 /Ag structure at a current compliance (CC) of 5 mA .…”

Rapid Paper-Based System for Human Serum Creatinine Detection

“…Numerous approaches for creatinine detection have been reported in the literature, including Jaffé kinetic assays [4][5][6], enzyme reactions [7], capillary electrophoresis [8], chemiluminescence [9], chromatography [10], molecular imprinted polymer (MIP) assays [11], spectrophotometry [12,13], liquid chromatography-tandem mass spectrometry (LC-MS/MS) [14], potentiometric sensors [15,16], electrochemical sensors [17,18], colorimetry [19,20], pH sensors [21,22], amperometric sensors [23,24] and nanoparticle-enhanced sensors [25][26][27]. Although the results of these common methods provide accurate and reliable results, while almost all these instruments are bulky, expansive and require complicated operations.…”