Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures

Shang, Dashan; Chen, Lidong; Wang, Quan-Fang; Wu, Zhenhua; Zhang, W Q; Li, X M

doi:10.1088/0022-3727/40/17/054

Cited by 11 publications

(6 citation statements)

References 21 publications

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“…However, there is a consensus that the interface between the top electrode (TE) and the manganite film plays an important role in the RS effect. So, several metals have been used as TEs to modulate the interface structure, such as Pt, Au, Ag, Al, Ti, Sm, Ta, Mo and Ni [17][18][19][20][21][22][23][24][25][26]. According to the affinity of the metal, the electrode material can be classified into two kinds: inert metal and active metal.…”

Section: Introductionmentioning

confidence: 99%

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface

Yang¹,

Li²,

Yu³

et al. 2009

J. Phys. D: Appl. Phys.

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The current-voltage characteristics, carrier transport processes and electric pulse induced resistance switching behaviour have been investigated in Al/La 0.7 Ca 0.3 MnO 3 (LCMO)/Pt sandwich structures. A stable resistance switching effect was obtained when a soft breakdown process occurred during negative voltage sweeping. Moreover, the trigger condition of the high resistance state is completely different from that of the low resistance state. Based on the investigation on the carrier transport processes of different resistance states, it is suggested that the resistance switching effect is closely related to the resistance change of the AlO x layer formed at the Al/LCMO interface. The local oxidation/reduction of the AlO x layer associated with the rupture/formation of conductive filaments is proposed to explain the resistance switching effect. A simple method to control the oxidation/reduction of the AlO x layer has been devised to improve the resistance switching properties by adjusting the thickness of the Al electrode.

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Section: Introductionmentioning

confidence: 99%

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface

Yang¹,

Li²,

Yu³

et al. 2009

J. Phys. D: Appl. Phys.

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“…1 Moreover, they can also show resistive switching phenomena driven by electric fields. [2][3][4][5][6][7] Being nonvolatile and reversible, such switching appears promising for potential applications in mass storage devices, such as resistive random access memory. Considering manganites as strongly correlated electron systems with a complex interplay of charge, spin, orbital, and structural ordering, the physical origin of the resistance switching still remains unclear.…”

mentioning

confidence: 99%

Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

et al. 2010

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We report the local-conductivity properties of a La 0.8 Ca 0.2 MnO 3 thin film, studied by conductive atomic force microscopy. Nonvolatile and bipolar reversible switching of nanometer-sized regions was observed. A threshold voltage, U c Ϸ 3 V, and a logarithmic pulse-width dependence compatible with domain-wall creep were revealed. The results are difficult to explain in terms of an ionic drift scenario but rather indicate a switching mechanism based on orbital and accompanying structural changes. A phenomenological model of an electric field-induced structural transition is proposed.

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“…The same trend has been previously reported for LCMO layers, 13,22 including the distinctive behaviours for HRS and LRS. 38 In addition, the EPIR ratio is defined as…”

Section: B Characterization and Simulation Of The Fatigue Profilementioning

confidence: 99%

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

Miranda

Acevedo

Rubi

et al. 2017

Journal of Applied Physics

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The hysteretic conduction characteristics and fatigue profile of La 1/3 Ca 2/3 MnO 3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.

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Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La_0.7Ca_0.3MnO₃–Pt heterostructures

Cited by 11 publications

References 21 publications

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface

Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

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Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures

Cited by 11 publications

References 21 publications

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3interface

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3interface

Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

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Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La_0.7Ca_0.3MnO₃–Pt heterostructures

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface

Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La_0.7Ca_0.3MnO₃interface