Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

O’Reilly, Andrew; Quitoriano, Nathaniel J.

doi:10.1016/j.jcrysgro.2017.10.038

Cited by 6 publications

(4 citation statements)

References 30 publications

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“…First, we suggest that the lattice-mismatch strain can be relaxed by extending the existing MDs in the first-to-nucleate areas (e.g., rectangle #1 in Figure a), as depicted in Figure a. Nevertheless, the lateral extension of existing MDs can only relax the films in one direction and could result in uniaxially strained films . Since the films are completely relaxed as shown in XRD, relaxation is also required in the other direction as well.…”

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confidence: 89%

“…Nevertheless, the lateral extension of existing MDs can only relax the films in one direction and could result in uniaxially strained films. 23 Since the films are completely relaxed as shown in XRD, relaxation is also required in the other direction as well. We therefore hypothesize that the films could be relaxed in the other direction as depicted in Figure 6b where lattice planes can be skipped as the film grows laterally; this is equivalent to MDs nucleating from the edge every ∼25 atomic spacings to relax the 4% lattice mismatch between Si and Ge.…”

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confidence: 99%

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New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Wang

Quitoriano

2018

Crystal Growth & Design

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We demonstrate a novel growth technique, metal-catalyzed, lateral epitaxial growth, to grow Ge films laterally on Si with reduced threading dislocation densities (TDD). In contrast to traditional planar film growth on Si, this technique starts with a small crystal nucleation at a specific position on Si followed by Ge lateral film growth. In plan-view and cross-sectional transmission electron microscopy micrographs, high-density threading dislocations were found to be present in the initial growth areas, while the lateral overgrowth areas demonstrated substantially reduced TDD or even defect-free areas. Furthermore, the X-ray diffraction results showed that the films were fully relaxed and mostly pure Ge. Full relaxation and low TDD Ge films are two surprising results given that the growth occurred at a low temperature (375 °C), which cannot be understood with the current misfit dislocation nucleation and glide model of film relaxation. For these reasons, we suggest the presence of a new relaxation mechanism one in which the strain induced by the lattice mismatch can be relaxed by extending preexisting misfit dislocations and that lateral growth can “build in” dislocations as it grows.

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confidence: 89%

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confidence: 99%

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Wang

Quitoriano

2018

Crystal Growth & Design

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“…SiGe crystals or films grown by LPE methods were reported starting in late 1980 s 17–28 . Various solvents including, In 18 , Bi 20 , AuBi 29 , Sn 24 , and Ga 24 have been used.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the low capital equipment and operating costs; the absence of toxic precursors or byproducts; and producing Si layers with detect densities an order of magnitude lower than that of the Si substrates are the major advantages. Recently, LPE is found to be especially suited for conducting epitaxial lateral overgrowth on patterned or masked substrates for novel device structures 16 , 17 .…”

Section: Introductionmentioning

confidence: 99%

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Chang

2019

Sci Rep

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Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped Si1−xGex crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal conductor. However, available thin film deposition methods such as metal organic chemical vapor deposition, electron-beam evaporation, or sputtering are unable to produce highly-doped SiGe single crystals or thick films of high quality. To fabricate the desired material, we here employ liquid phase epitaxy to make highly-doped (up to 2% GaP doping) SiGe crystals with minimized concentration variations on Si (111) and (100) substrates. We find that growing Si1−xGex (x = 0.05~0.25) crystals from Ga solvents at relatively high vacuum pressure (0.1 torr) displays significant deviations from previous calculated phase diagram. Moreover, doping GaP into SiGe is found to affect the solubility of the system but not the resulting Ge concentration. We thus plot a new pressure-dependent phase diagram. We further demonstrate that the new pressure-induced liquid phase epitaxy technique can yield Si1−xGex crystals of much higher Ge concentrations (x > 0.8) than those grown by the conventional method.

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

O’Reilly

Quitoriano

2018

Journal of Crystal Growth

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Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

Cited by 6 publications

References 30 publications

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

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Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

Cited by 6 publications

References 30 publications

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

New Relaxation Mechanism Enabling High-Quality, Laterally Grown Ge on Si

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy