Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

O’Reilly, Andrew; Quitoriano, Nathaniel J.

doi:10.1016/j.jcrysgro.2017.12.010

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…Arrays of long parallel misfit dislocations in only one direction have been reported before, but the samples were grown by liquid phase epitaxy on smaller substrates. 29 Here, it can be shown that unidirectional arrays of dislocations can be generated over the whole 300 mm wafer with a fourfold symmetry by a standard CVD process. In case the threading segment meets a perpendicular lying misfit dislocation, it may react and stop or cross it, if the Burgers vector is dissimilar.…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Becker¹,

Storck²,

Schulz

et al. 2020

Journal of Applied Physics

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Strain relaxed Si 1Àx Ge x buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For industrial applications, the threading dislocation density (TDD) has to be as low as possible. However, a reduction of the TDD is limited by the balance between dislocation glide and nucleation as well as dislocation blocking. The relaxation mechanism of low strain Si 0:98 Ge 0:02 layers on commercial substrates is compared to substrates with a predeposited SiGe backside layer, which provides threading dislocations at the edge of the wafer. It is shown that by the exploitation of this reservoir, the critical thickness for plastic relaxation is reduced and the formation of misfit dislocation bundles can be prevented. Instead, upon reaching the critical thickness, these preexisting dislocations simultaneously glide unhindered from the edge of the wafer toward the center. The resulting dislocation network is free of thick dislocation bundles that cause pileups, and the TDD can be reduced by one order of magnitude.

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Section: Journal Of Applied Physicsmentioning

confidence: 99%

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Becker¹,

Storck²,

Schulz

et al. 2020

Journal of Applied Physics

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“…Si0.973Ge0.027 epitaxial layers were grown on a Si(001) substrate by lateral liquid phase epitaxy (LLPE) and this reduced the dislocation density to 10 3 cm -2 . But relatively small (х=0.027) Ge contents in the composition of Si1-xGex have little effect on the electrophysical and photoelectric properties of the films; this will limit the great possibilities of their application in instrumentation [7].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

RAZZOKOV

Eshchanov

2022

J Met Mater Miner

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Thermodynamic calculations have been carried out for growing crystalline Si1-xGex solid solution epitaxial films on Si<100> and Si<111> substrates from a tin solution-melt by liquid-phase epitaxy. Nanoclusters are thought to be involved in crystal growth. To determine the optimal conditions for obtaining a Si1-xGex crystal from a Si-Ge-Sn solution system, we focused on the change in Gibbs energy and the size of the nanoclusters involved in crystal formation. On this basis, a film with a thickness of 5 µm to 8 µm was experimentally obtained in the temperature range from Тc.s.=1135 K (crystallization start temperature) to Тc.t.=1023 K (crystallization termination temperature). It was also possible to reduce the dislocation density at the substrate-film boundary (up to 3 ´ 104 cm-2) and along the growth direction (film surfaces up to 8 ´ 103 cm-2). A method of thermodynamic prediction for obtaining semiconductor structures has been developed.

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Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

Milanova

Kirilov

Georgiev

et al. 2021

Journal of Crystal Growth

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Cited by 5 publications

References 22 publications

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

Cited by 5 publications

References 22 publications

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

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Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy