Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Petersen, John S.; McCallum, Martin; Kachwala, Nishrin; Socha, Robert; Chen, J. Fung; Laidig, Thomas L.; Smith, Bruce W.; Gordon, Ronald L.; Mack, Chris A.

doi:10.1117/12.332837

Cited by 18 publications

(8 citation statements)

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“…Simulations have indicated that, high transmission masks provide benefits over the conventional transmission ones in terms ofresolution, DOF, better pattern fidelity through focus i.e. reduced corner rounding and line end shortening (3). The goal ofthis work was to establish the benefits ofHiT aft.…”

Section: Introductionmentioning

confidence: 98%

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

Kachwala¹,

Petersen²,

McCallum³

2000

SPIE Proceedings

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Simulations indicate high transmission attenuated phase shift mask to improve resolution, reduce line end shortening, corner rounding and provide process window enhancements for some pitches. They also indicate that as the transmission is increased for line features, the Normalized image log slope (NILS) increases for all pitches. In this work the performance of33% and 20% attenuated masks has been compared against 6% and binary masks.Imaging results were obtained for l6Onm features at various pitches with a O.6NA 248nm SVGL MSIII with conventional and annular illumination. Performance ofhigh transmission in terms ofDepth ofFocus, Overlapping process windows (ODOF), Exposure latitude and Proximity effects with the various % transmissions. Critical issues such as manufacturing oftri-tone masks, Inspection, Repair and material availability for High transmission (HiT) masks will be addressed.

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Section: Introductionmentioning

confidence: 98%

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

Kachwala¹,

Petersen²,

McCallum³

2000

SPIE Proceedings

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“…However, it has been difficult to assure zero defects on reticule and we needed to rely on customers for wafer print check as the final assurance of Alt-PSMs. There were two reasons, (1) no inspection tools that could detect all kinds of phase shift defects, (2) no appropriate repair method for phase shift defects which contain various types and heights. In order to resolve these problem, we experimented below l-3.…”

Section: Introductionmentioning

confidence: 99%

“…1 To apply Alt-PSMs for device mass production, we need to supply zero defect reticules. However, it has been difficult to assure zero defects on reticule and we needed to rely on customers for wafer print check as the final assurance of Alt-PSMs.…”

Section: Introductionmentioning

confidence: 99%

Detection and repair of multiphase defects on alternating phase-shift masks for DUV lithography

et al. 1999

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Alternating Phase-Shift Mask (Alt-PSM) is one of the key technologies for O.l5pm or below rule device fabrication. But it is not yet widely utilized because of difficulty on phase controllability and defect controllability. Through more than 7 years at our commercial base operation and feedback from customers, we have improved our Alt-PSM both on its performance on wafer resist image and defect minimization.We have focused on the two elements, defects detection and repair, that made it difficult to control defect quantity on Alt-PSMs. In this paper, we describe results of experiment and optimization method that aims to assure zero defect on Alt-PSM for DUV lithography.We prepared evaluation plates. The plates contain series of programmed quartz defect on O.6pm line & space, each has phase errors of 60, 120 and 1 80 degrees at KrF wavelength. We used several latest models of inspection tools to evaluate phase shift quartz defect detectability, which are KLA353UV, STARlight, 9MD84SR(i). Micrion8000 was used as the repair tool. MSM-lOO/AIMS was used to evaluate wafer CD error ofdefect area before and after repair.As results, we found that inspection by short wavelength, especially by 9MD845R(i), was effective for detection of phase shift defects, and that if this method were combined with STARlight inspection, detectability ofthe phase shift defect would be improved. With combination of this inspection method and our FIB repair, which is optimized for pre-measured height of each phase shift defect by use of AFM, we would be able to supply zero defect Alt-PSMs for O.l5pm design rule devices.

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“…For example, the quality and brightness of a weak phase-shifted contact depends on the strength of its side lobe, however, if the side lobe is too bright it will print unless the resist is modified not to print it. 16 …”

Section: Opc With Base Diffusivity (And Other Resist Characteristics)mentioning

confidence: 99%

Resist requirements in the era of resolution enhancement techniques

Petersen¹,

Byers

2003

Advances in Resist Technology and Processing XX

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At the heart of the tremendous advances of optical microlithography are the resists and the people who drove them to ever-higher performance. In 1980, a resist could reliably image around a k 1 of 1.0 to 0.8. Today without any other extreme RET, resists with anti-reflection coatings production imaging has extended resolution to 0.6 to 0.45 k 1 , effectively doubling the NA of the integrated imaging system. Manipulation of the interrelationships of the physics and chemistry of the imaging process has made this possible. History shows that resists must be designed to best utilize the image being formed in them and that a resist designed for one application may not work for another. This holds true for resolution enhancement techniques as well, for example the quality and brightness of a weak phase-shifted contact depends on the strength of its side lobe, however, if the side lobe is too bright it will print unless the resist is modified not to print it. Also as technology moves to smaller features severe proximity effects make it necessary to adjust resist performance to compensate for these effects. In this discussion we concentrate on the physical chemical effects that makes it possible to extend resolution using resolution enhancement techniques. We will concentrate on energy coupling into the film with high NA imaging at the diffraction limit, the reaction-diffusion reaction and the impact of acid and base diffusion in chemically amplified resists.Keywords: resist, resolution enhancement technique, RET, microlithography, chemically amplified resists, 248nm, 193nm, 157nm, simulator, antireflection coating, ARC IntroductionThe cost of designing and taking to market an advanced semiconductor product is becoming prohibitively expensive. Delaying delivery of production quantities of a new chip can cost millions of dollars in lost margins. Having to retool mask sets can cost more than $1 million at the 130nm technology node and beyond. Lost productivity of a $2 billion factory can cost in the neighborhood of $1 million per day, and use of these facilities, as laboratories must be reduced to a critical minimum. When considering that it costs each integrated-device-manufacturer (IDM) and foundry $300 to $500 million to develop a new manufacturing technology-node, and in addition that a state-of-the-art chip like a microprocessor at the 130nm node costs $18 million to design and at the 90nm node costs around $50 million to design with a significant portion being nonrecurring-engineering costs (NRE), it becomes imperative that product is designed so that it not only achieves yield entitlement quickly but does so with the desired performance specifications.

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Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Cited by 18 publications

References 0 publications

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks

Detection and repair of multiphase defects on alternating phase-shift masks for DUV lithography

Resist requirements in the era of resolution enhancement techniques

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