2018
DOI: 10.1116/1.5009918
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Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

Abstract: The manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Althoug… Show more

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Cited by 6 publications
(5 citation statements)
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“…Since the FWHM of this structure was strongly influenced by the grating width, a discussion of the effect of fabrication tolerances was mandatory. Since the fabrication tolerances of the EBL mentioned above were about ±10 nm [41], we simulated the variation of the FWHM when the fabrication tolerances of ±10 nm were applied to the grating width. We considered the 20 cells as one period, as shown in figure 11.…”
Section: Effect Of Fabrication Tolerancesmentioning
confidence: 99%
“…Since the FWHM of this structure was strongly influenced by the grating width, a discussion of the effect of fabrication tolerances was mandatory. Since the fabrication tolerances of the EBL mentioned above were about ±10 nm [41], we simulated the variation of the FWHM when the fabrication tolerances of ±10 nm were applied to the grating width. We considered the 20 cells as one period, as shown in figure 11.…”
Section: Effect Of Fabrication Tolerancesmentioning
confidence: 99%
“…The concept of nanotechnology involves the use of low dimensional materials with different structural configurations which include the nanowires, nano-rods, nanotubes or nanocrystalline films [20]. A nanowire in electronics engineering is a circular or rectangular cross-sectional nanostructure that has a thickness or diameter constrained to tens of nanometers or less and an unconstrained length.…”
Section: Related Workmentioning
confidence: 99%
“…Hani Taha AlAriqi 1 , Waheb A. Jabbar 1,2 , Yasir Hashim 3 , Hadi Bin Серед різних методів зондування та моніторингу датчики на основі на польових транзисторів (FET), привернули значну увагу як з боку промисловості, так і з академічних кіл. Завдяки своїм унікальним характеристикам, таким як невеликі розміри, легка вага, низька вартість, гнучкість, швидка реакція, стабільність і можливість подальшого зменшення масштабу, кремнієвий нанопровідний транзистор (SiNW-FET) може служити ідеальним наносенсором.…”
Section: температурні характеристики кремнієвого нанопровідного транзunclassified
“…Design and fabrication of conventional metal oxide semiconductor field effect transistor (MOSFET) beyond sub-10 nm channel length become challenging issues due to short channel effects, such as leakage current, electrostatic limits, source-to-drain tunneling are very difficult, which causes a critical problem in terms of circuit reliability especially in complementary metal-oxide-silicon (CMOS). To overcome this issue, new 3D structures of transistors, including silicon nanowire transistors (SiNWT), were developed [1,2]. That incredible reaching has changed the world of nanotechnology.…”
Section: Introductionmentioning
confidence: 99%