Temperature Characteristics of Silicon Nanowire Transistor Depending on Oxide Thickness

Abstract

Among various sensing and monitoring techniques, sensors based on field effect transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and ability for further downscaling, silicon nanowire field effect transistor (SiNW-FET) can serve as an ideal nanosensor. It is the most likely successor to FET-based nanoscale devices. However, as the dimensions (channel length and diameter) of SiNWT channel are shrinking down, electrical and temperature characteristics of SiNWTs should be affected, thereby degrading transistor performance. Although applications of SiNWTs as biological and/or chemical sensors have been extensively explored in the literature, less attention has been devoted to utilize such transistors as temperature sensors. Therefore, this paper characterizes the temperature sensitivity of SiNWT depending on the channel oxide thickness and also presents the possibility of using it as a nano-temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different thickness of the nanowire gate (oxide thickness (TOX)  1, 2, 3, 4, and 5 nm), were simulated. Metaloxide-semiconductor (MOS) diode mode connection was suggested for measuring the temperature sensitivity of SiNWT. Several operating voltages (0.25 to 5 V) with various working temperature (250 to 450 K) were investigated. The obtained results show that the highest temperature sensitivity was achieved by increasing oxide thickness to 5 nm. The impact of the considered temperature on SiNWT characteristics demonstrates the possibility of utilizing it as a temperature nanosensor.

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

“…Additionally, the flexibility of SiNW transistors for future electronics was highlighted by Kim and Park's research, which looked at how to incorporate them into flexible electronic platforms [4]. The advancement of new technologies is explained by the remarkable scale of miniaturization to ultra-micro sizes [5]. It is the fundamental principle of nanotechnology that has penetrated the fields of applied sciences, manufacturing, industry, military, medicine, agriculture and other fields [6].…”

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

“…Nano-electronic applications have benefited enormously from substantial advancements in the emerging nanotechnology industry. The tremendous downscaling of transistor dimensions has enabled the placement of over 100 million transistors on a single chip, thereby resulting in reduced cost, increased functionality, and enhanced performance of integrated circuits (ICs) [1]- [3]. However, reducing the size of conventional planar transistors would be exceptionally challenging due to electrostatic leakages and other fabrication issues [4], [5].…”

Temperature characteristics of FinFET based on channel fin width and working voltage

“…used within equipment) is the semiconductor temperature sensor [13]. Transistor-based temperature sensors are designed on the basis of the temperature characteristics of current-voltage curves of nanowire transistors [14][15][16][17][18][19][20]. A bipolar transistor can be used as a temperature sensor by connecting its base and collector and operating them in diode mode.…”