Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy

Abstract

Growth and characterization of midinfrared InGaAs/InAlAs strained triplequantumwell lightemitting diodes grown on latticemismatched GaAs substrates

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

“…Pre-patterned substrates have also been used for ordering of QDs in a more direct way. Miu et al [9] grew by MBE on etched GaAs gratings and found islands to form on the sidewalls of ridges running along [1][2][3][4][5][6][7][8][9][10] direction. Similar results were obtained by Jeppesen et al [10] for Chemical Beam Epitaxy (CBE) deposited InAs islands in wet-etched and partially overgrown trenches and holes on a (100) GaAs surface.…”

“…In both cases, the projected probability density has elliptical form in the plane (k x , k y ). For the (100) case, the axis of electron wavefunction symmetry is at an angle~30°relative to the main crystallographic direction [1][2][3][4][5][6][7][8][9][10], i.e. it is inclined at around 15°to [100].…”

Cavity-quantum electrodynamics with quantum dots

“…The first method uses the directed migration of adatoms to a concave surface area. This can be realized by engineering the surface chemical potential [30,31] using a patterned surface ( figure 7(a)). …”

Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

“…Lateral ordering of QDs formed in the Stranski-Krastonov growth mode, otherwise producing randomly arranged QDs, has been achieved by artificial substrate patterning [2][3][4] and combined with vertical strain correlated stacking. 5,6 Artificial patterning techniques, however, often introduce defects and irregularities in the QDs given by the spatial resolution of the lithography and etching steps which degrade the electronic and optical qualities.…”