Cavity-quantum electrodynamics with quantum dots

Abstract

Semiconductor quantum dots (QDs) have emerged as promising candidates for studying quantum optical phenomena. In particular, cavity-quantum electrodynamics effects can be investigated using a single QD embedded inside a photonic nanostructure, where both the carriers and photons are confined within sub-micron length scales in all three dimensions. Since QD location inside the cavity is fixed by the growth, this system is free of the stringent trapping requirements that limit its atomic counterpart. The possibility of fabricating photonic nanostructures with ultra-small optical-mode volumes and long photon lifetimes enhances the prospects for applications in quantum information processing.

A photonic quantum gate based on electrically controlled strong cavity coupling between a single nanocrystal quantum dot and an ultrahigh Q silica microcavity

“…Quantum gates based on cavity enhanced interactions between quantum dots have been proposed 16 and a quantum gate based on the states within a single quantum dot has already been demonstrated. 17 Therefore it seems that the use of a quantum dot as a quantum object for use in a CQED based quantum gate is worth considering.…”

High-Q Defect-Free 2D Photonic Crystal Cavity from Random Localised Disorder

“…The presence of a photonic bandgap in PhCs gives rise to a variety of potential applications, for example they can act as filters [2], optical switches, as promising components for photonic integrated circuits [3], and as defect laser cavities [4]. PhC-based cavities offer compact and efficient optical confinement with high quality factors (Q) [5] and small modal volumes (V), which is advantageous for cavity QED experiments, for example using 2D geometries which can be coupled to quantum emitters [6,7]. In particular, the high-Q and small V offers the enhancement of the spontaneous emission rate of a coupled emitter-cavity system [8].…”

Registration of single quantum dots using cryogenic laser photolithography

“…It is desirable to develop a technique that enables the fabrication of an aligned cavity by marking, or registering, the spatial position of a QD. 6,7 In this letter we present an innovative technique for the registration of a single QD, located by low-temperature spectroscopy, by the creation of alignment markers by photolithography at 4 K. Markers are created by two-photon absorption ͑TPA͒ laser photolithography of SU-8, a negative photoresist widely used in the microelectromechanical systems community. 8 TPA photolithography exploits nonlinear absorption by SU-8 of high-peak-power laser pulses at a wavelength that is too long to expose the resist by singlephoton absorption.…”