ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

Albahrani, Sayed Ali; Mahajan, Dhawal; Hodges, Jason; Chauhan, Yogesh Singh; Khandelwal, Sourabh

doi:10.1109/ted.2018.2868261

Cited by 74 publications

(25 citation statements)

References 17 publications

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“…Nonetheless, both options are not generally viable. Commonly, the datasheets of GaN switching devices do not specify switching losses and validated SPICE models are not widely accessible, even if remarkable progress has been made in that direction [5]- [7]. In consequence, measurements are still the only feasible alternative for characterizing the switching loss in many GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Uncertainty Analysis in the Measurement of Switching Losses in GaN FETs Power Converters

Azpúrua

Pous

Silva

2020

2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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This paper analyses the method for measuring the switching losses in Gallium Nitride (GaN) Field Effect Transistors (FETs) employed in highly efficient power electronics applications, particularly in DC-DC converters. In this regard, the switching losses are measured through the integration of the product of the voltage multiplied by the current during the turn-on and turn-off intervals of the switching process. The objective of this analysis is to identify, model, correct/minimize and quantify the main contributions to the switching losses' measurement uncertainty following a topdown approach. First, a set of general specifications for a suitable test bench is given. Subsequently, the distortion of the oscilloscope-probe system and the influence of the current shunt is studied along with a method for correcting the waveform distortion. Then, based on the model describing the general measurement method, the individual sources of uncertainty are stripped down, giving guidance regarding how to estimate each of them. Finally, such individual contributions to the switching losses measurement uncertainty are propagated and combined following the guidelines of the "Guide to the Expression of Uncertainty in Measurement".

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Section: Introductionmentioning

confidence: 99%

Uncertainty Analysis in the Measurement of Switching Losses in GaN FETs Power Converters

Azpúrua

Pous

Silva

2020

2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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“…In the last decade, physics-based models of AlGaN/GaN HFETs have been the primary focus of many researchers. Based on calculated surface potential, the ASM model has been developed for industry application [1][2][3][4]. At the same time, the traditional physical models derivate from mobility-velocity relation, which has been previously researched and its results studied [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Yang

Lv²,

Lin

et al. 2020

Electronics

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A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of lg/lsd (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs.

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“…Various modeling techniques for GaN HEMTs with trapping eects have been investigated [1], [2], [5], [10], [14][15][16][17][18][19][20]. A commonly used approach is the empirical function/equivalent circuit approach, such as [1], [8], [9], [21][22][23][24].…”

Section: List Of Symbolsmentioning

confidence: 99%

“…Physics-based compact modeling approach [4], [17], [25][26][27][28][29][30][31][32][33], is another type of GaN HEMT modeling technique. In this approach, the model has physics insight, good accuracy, and reasonably fast computational speed.…”

Section: List Of Symbolsmentioning

confidence: 99%

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Advanced Space Mapping and Artificial Neural Network-Based Techniques for Microwave Device Modeling

Zhi-hao¹

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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

Cited by 74 publications

References 17 publications

Uncertainty Analysis in the Measurement of Switching Losses in GaN FETs Power Converters

Uncertainty Analysis in the Measurement of Switching Losses in GaN FETs Power Converters

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Advanced Space Mapping and Artificial Neural Network-Based Techniques for Microwave Device Modeling

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