As-grown two-dimensional MoS2 based photodetectors with naturally formed contacts

Abstract

Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report on as-grown monolayer MoS2 metal-semiconductor-metal photodetectors produced using a CVD process which results in self-contacted two-dimensional material-based devices. The photodetectors show high responsivity (∼1 A/W) even at a low drain-source voltage (VDS) of 1.5 V and a maximum responsivity of up to 15 A/W when VDS = 4 V with an applied gate voltage of 8 V. The response time of the devices is found to be on the order of 1 μs, an order of magnitude faster than previous reports. These devices demonstrate the potential of this simple, scalable, and reproducible method for creating as-grown two-dimensional materials-based devices with broad implications for basic research and industrial applications.

Resonant photonic crystals based on van der Waals heterostructures for effective light pulse retardation

“…However, we assume that the Bragg spacing can be realized, e.g., by precise thinfilm technology or by spin-coating technique developed to cover a monolayer by a polymer film [24]. Stacking of the TMD and hBN monolayers can be done by methods varying from traditional exfoliation to epitaxial growth which has rapidly developed in recent years [25,26].…”

Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2

“…These two peaks are well separated by 22 AE 0.5 cm À1 , which indicates the single/bi layer nature MoS 2 lm. 39,41,42 Raman mapping was employed to characterize the uniformity of the MoS 2 . Fig.…”

Thermal Annealing Effects on Naturally Contacted Monolayer MoS2

“…[30] This technique has been used to produce as-grown device structures and complex material geometries. [32,33] At typical growth temperatures, around 750 C, the MoS 2 forms a continuously connected film around the bulk transition metal pattern and no random, unconnected, MoS 2 growth is observed. At higher growth temperatures, around 850 C, the MoS 2 more easily migrates away from the patterns and may form isolated, free, regions of material, as shown in Figure 1d.…”