High
throughput characterization and processing techniques are
becoming increasingly necessary to navigate multivariable, data-driven
design challenges for sensors and electronic devices. For two-dimensional
materials, device performance is highly dependent upon a vast array
of material properties including the number of layers, lattice strain,
carrier concentration, defect density, and grain structure. In this
work, laser crystallization was used to locally pattern and transform
hundreds of regions of amorphous MoS2 thin films into 2D
2H-MoS2. A high throughput Raman spectroscopy approach
was subsequently used to assess the process-dependent structural and
compositional variations for each illuminated region, yielding over
6000 distinct nonresonant, resonant, and polarized Raman spectra.
The rapid generation of a comprehensive library of structural and
compositional data elucidated important trends between structure–property
processing relationships involving laser-crystallized MoS2, including the relationships between grain size, grain orientation,
and intrinsic strain. Moreover, extensive analysis of structure/property
relationships allowed for intelligent design and evaluation of major
contributions to device performance in MoS2 chemical sensors.
In particular, it is found that NO2 sensor performance
is strongly dependent on the orientation of the MoS2 grains
relative to the crystal plane.