We study the optical properties of MoS2 nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence (μ-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in μ-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.

We measure low-temperature micro-photoluminescence spectra along a MoS 2 nanotube, which exhibit the peaks of the optical whispering gallery modes below the exciton resonance. The energy fluctuation and width of these peaks are determined by the changes of the nanotube wall thickness and propagation of the optical modes along the nanotube axis, respectively. We demonstrate the potential of the high-quality nanotubes for realization of the strong coupling between exciton and optical modes when the Rabi splitting can reach 400 meV. We show how the formation of exciton-polaritons in such structures will be manifested in the micro-photoluminescence spectra and analyze the conditions needed to realize that.

Core–shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multi-color displays. Such applications, however, are still a challenge because intensity of the red band is too weak compared with blue and green. To clarify this problem, we measured photoluminescence of different NRs, depending on power and temperature, as well as with time resolution. These studies have shown that dominant emission bands come from nonpolar and semipolar QWs, while a broad yellow-red band arises mainly from defects in the GaN core. An emission from polar QWs located at the NR tip is indistinguishable against the background of defect-related luminescence. Our calculations of electromagnetic field distribution inside the NRs show a low density of photon states at the tip, which additionally suppresses the radiation of polar QWs. We propose placing polar QWs inside a cylindrical part of the core, where the density of photon states is higher and the well area is much larger. Such a hybrid design, in which the excess of blue radiation from shell QWs is converted to red radiation in core wells, can help solve the urgent problem of red light for many applications of NRs.

Abstract:We show that the stacks of two-dimensional semiconductor crystals with the chiral packing exhibit optical activity and circular dichroism. We develop a microscopic theory of these phenomena in the spectral range of exciton transitions that takes into account the spin-dependent hopping of excitons between the layers in the stack and the interlayer coupling of excitons via electromagnetic field. For the stacks of realistic twodimensional semiconductors such as transition metal dichalcogenides, we calculate the rotation and ellipticity angles of radiation transmitted through such structures. The angles are resonantly enhanced at the frequencies of both bright and dark exciton modes in the stack. We also study the photoluminescence of chiral stacks and show that it is circularly polarized.

Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are much in demand. Here, we present site-controlled III-nitride monocrystal cup-cavities grown by molecular beam epitaxy. The cup-cavities can operate from ultraviolet to near-infrared, supporting quasi whispering gallery modes up to room temperature. Besides, their energies are identical in large ’ripened’ crystals. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the spatial redistribution of electric field intensity with concentration of light into a subwavelength volume. Our results shed light on the mode behavior in semiconductor cavities and open the way for single-growth-run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.

We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside a semiconductor tapered nanocolumn acting as a multimode nanoantenna. Despite the presence of many optical modes inside, such a nanoantenna is able to collect the quantum dot radiation and ensure its effective output. We demonstrate periodic arrays of such emitters, which are fabricated by focused ion beam etching from a II-VI/III-V heterostructure grown using molecular beam epitaxy. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 5 MHz with the second-order correlation function g(2)(0) = 0.25 at 220 K. Such single photon emitters are promising for secure free space optical communication lines.

This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap IIVI heterostructures emitting in the true yellow range (560600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained Zn1−xCdxSe (x = 0.2−0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total Zn1−xCdxSe quantum well thicknesses (d ≈ 2−4 nm) reducing eciently the emission wavelength, while the variation of x (0.20.5) has much stronger eect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ = 590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding ZnS0.17Se0.83/ZnSe superlattice were introduced to compensate the compressive stress induced by the Zn1−xCdxSe quantum well. The graded-index waveguide laser heterostructure with a CdSe/Zn0.65Cd0.35Se/Zn(S,Se) quantum dotquantum well active region emitting at λ = 576 nm (T = 300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.

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