Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

Fissel, A.

doi:10.1016/s0370-1573(02)00632-4

Cited by 167 publications

(71 citation statements)

References 294 publications

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“…These materials have been successfully used for creation of unusual structural and functional properties, as well as combinations of properties. To obtain these metastable materials, there applied are plastic deformation of crystals, irradiation, rapid condensation of vapors (gas) [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

Vlaskina¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Perfect pure (concentration of donors ~316 cm 10  ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 6H C 3  ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β.

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Section: Introductionmentioning

confidence: 99%

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

Vlaskina¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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“…In technology, cubic and hexagonal SiC polytypes are widely used, such as 3C-SiC (also called β-SiC polytype), 4H-SiC and 6H-SiC (also called α-SiC polytype) (see Fig. 1) [2].…”

Section: Introductionmentioning

confidence: 99%

Non-Destructive Eddy Current Measurements for Silicon Carbide Heterostructure Analysis

Sahakyan¹,

Koel²,

Rang³

2017

Materials and Contact Characterisation VIII

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Heterostructures consisting of two different silicon carbide (SiC) polytypes have been of interest for several years, promising application in the field of UV LEDs and sensors. Direct bonding (also called diffusion welding) is a technology that could possibly be used for manufacturing SiC heterostructures. The technology has been proven in experimental production of power devices for ohmic-and Schottkycontacts to SiC, as well as high-voltage stacks. The fabrication of heterostructures has not been successful yet, due to the hardness of SiC as well as the high temperature and pressure needed for accomplishing a reliable joint between two SiC polytype wafers. No thorough analysis is available in studying the quality of achieved contacts and the causes for their short breakdown in time. The intention is to try higher temperatures than used before for direct bonding of SiC different polytypes. To understand the contact failure causes there is a need for quick non-destructive measurements of the heterojunction properties in the depth of bonded layers. Eddy currents measurements seems to be the best solution for further investigation. Simulations with COMSOL Multiphysics general-purpose simulator are carried out with different electrode shapes and different electrode placements. The numerical simulation and test equipment building results at the Thomas Johann Seebeck Department of Electronics are analyzed and discussed.

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“…The nucleation of 3C on on-axis hexagonal polytype has also been addressed at high temperature and key points to get single domain were related to the initial step density of the substrate and the interaction between the steps and the anisotropic lateral growth of the 3C domains [13]. With top-seeded solution method, DPB free 3C layers were obtained using off-axis 6H-SiC substrates, but towards [1-100] instead the standard [11][12][13][14][15][16][17][18][19][20] [14]. Molecular beam epitaxy using solid source evaporation is proposed to achieve the growth of heteropolytypic structures, however many challenges are still not resolved with this technique [15].…”

Section: Introductionmentioning

confidence: 99%

“…With top-seeded solution method, DPB free 3C layers were obtained using off-axis 6H-SiC substrates, but towards [1-100] instead the standard [11][12][13][14][15][16][17][18][19][20] [14]. Molecular beam epitaxy using solid source evaporation is proposed to achieve the growth of heteropolytypic structures, however many challenges are still not resolved with this technique [15]. Very few simulation works have been published up to now; recently growth for high quality 3C layers on highly misoriented 6H was suggested to be more promising than the use of 4H-SiC substrate.…”

Section: Introductionmentioning

confidence: 99%