3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

Henry, Anne; Li, Xun; Jacobson, Henrik; Andersson, Sandra; Boulle, Alexandre; Chaussende, Didier; Janzén, Erik

doi:10.4028/www.scientific.net/msf.740-742.257

Cited by 8 publications

(5 citation statements)

References 26 publications

(37 reference statements)

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“…According to the symmetry difference between wurtzite AlN and cubic SiC, the latter is expected to develop twinned domains, as previously mentioned. This twin formation is similar to that encountered during the growth of cubic SiC on hexagonal SiC polytypes [24,25]. The azimuthal scans, recorded along diverse out-of-plane reflections, demonstrate the presence of twinned domains in SiC, as illustrated in Figure 2b,c.…”

Section: Structural Investigationssupporting

confidence: 69%

“…We noted that islands developing on the off axis AlN/Si template (Figure 1a) tended to grow on the surface by forming triangles pointing either perpendicularly to the AlN steps or in the opposite direction with a truncated side, as indicated in the figure. This point is discussed thoroughly hereafter, but this is a typical trend observed during the growth of a three-fold symmetry material growing on a six-fold symmetry substrate (twinning mechanism), as in the case of 3C-SiC growth on hexagonal SiC substrates [24,25].…”

Section: General Trends Observed In Morphology Of 3c-sic Epilayersmentioning

confidence: 99%

“…In the case of 3C-SiC (three-fold symmetry) growth on hexagonal (4H-or 6H-) SiC substrates (six-fold symmetry), the formation of twinned domains is an issue that sparks an ongoing debate. Some authors have mentioned that twin suppression can be driven by adjusting the growth parameters [25,26]; others reported the need for adequate substrate preparation [30]. For the growth of 3C-SiC on 2H-AlN, many parameters can also influence the initial nucleation of SiC on AlN.…”

Section: Structural Investigationsmentioning

confidence: 99%

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CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

et al. 2022

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(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.

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Section: Structural Investigationssupporting

confidence: 69%

Section: General Trends Observed In Morphology Of 3c-sic Epilayersmentioning

confidence: 99%

Section: Structural Investigationsmentioning

confidence: 99%

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CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

et al. 2022

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“…The layers were qualified as single domain when no (DPBs) which are a twinning of the grown layer, were observed as shown in Fig. 1 [4] to only consist of one domain which suggests that the starting conditions have a major impact on how fast the layer will continue to grow by one domain formation. This overtake of one domain is also confirmed by TEM measurements.…”

Section: Resultsmentioning

confidence: 98%

Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Jacobson

Janzén

et al. 2013

MSF

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3C-SiC epilayers grown on Si-face nominally on-axis 4H-SiC substrate are characterized with X-ray diffraction techniques. The aim was to investigate if these 3C-SiC epilayers were grown by single domain growth. The results show that all samples start by having several nucleation centers all over the substrate surface and the growth continues with two domain formations. As the growth proceeds one domain overtakes the growth and single domain crystal growth occurs. This single domain was further investigated and the results show that it seems to contain many sub-domains with same lattice constant but slightly tilted.

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“…Among the different ways explored to grow twin-free 3C-SiC layers, using chemical vapour deposition (CVD) based approach should be the best solution due its high scalability, reproducibility and the good performances of the SiC-CVD reactors. From the literature, one can easily see that the key parameter for twin elimination is the 3C nucleation which can be tuned either by specific surface preparation of the SiC substrates [7] or by changing the deposition chemistry [8]. To the best of our knowledge, the addition of a foreign isolelectronic element, such as Ge, before or during 3C-SiC growth on α-SiC substrate has not been reported yet.…”

Section: Introductionmentioning

confidence: 99%

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

Alassaad

Soulière

Vivona

et al. 2014

MSF

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The aim of this work is to study the effect of Ge introduction during the nucleation step on the SiC growth on 4H-SiC on-axis substrate. After 10 minutes surface pretreatment at 1500°C under C3H8or GeH4, the grown 3C layer at the same temperature can switch from highly twinned (C3H8) to almost twin-free single domain (GeH4). However, for too low and too high GeH4fluxes, the layers display a mixture of polytype. Keeping the best pretreatment but varying the growth temperature degrades the morphology and changes the polytype of the layer. Preliminary electrical results using C-AFM on the 3C-SiC layer are also presented.

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3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

Cited by 8 publications

References 26 publications

CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

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