Optical properties of porous A 3 B 5 semiconductors (GaAs, InP, and GaP) in the far infrared region, in particular, the specular reflection and attenuated total reflection, including the excitation regime of surface polaritons, are considered. Considering a porous material as a composite, we performed calcula tions in the context of the effective medium model using two modifications of it, Maxwell Garnett and Bruggeman, which correspond to two different topologies of the composite material-matrix and statistical. The effect of porosity of the material and of such parameters as doping, anisotropy, and penetration depth of an electromagnetic wave to a porous material on optical spectra is analyzed. In addition, some experimental data are presented and the adequacy of the performed numerical simulation is demonstrated.