ArF laser photolysis of gaseous CS2–(CH3)4Sn mixtures: gas-phase reaction between tin and sulfur and deposition of nanosized tin sulfides incorporated in a polymer network

Gas-phase formation of SiSe in IR laser-co-decomposition of dimethyl selenide and 1,3-disilacyclobutane

“…The gaseous SiSe has yet been observed only when applying discharge to aluminium selenide in quartz tube [35] or silicon tetrachloride with selenium [36]. The formation of SiSe upon IR laser-induced codecomposition of a pair of Si-and Se-containing volatile compounds ( [11] and this work) does not appear promising for deposition of nano-sized SiSe due to high reactivity of this species towards other transients present in the irradiated system, although similar technique has been employed for CVD of other nanosized IV-VI metal chalcogenides [37][38][39][40].…”

IR laser-induced co-decomposition of gaseous trisilane and carbon disulfide

“…This laser technique makes possible chemical vapor deposition of nanosized tin sulfides [22], germanium sulfides [23], tin telluride [24] and germanium tellurides [25]. In conjunction with these studies, we have also examined IR laser-induced (thermal) gas-phase synthesis of silicon chalcogenides.…”

“…We have recently introduced a new, laser-induced gas-phase synthesis of metal chalcogenides, which consists in photolytic [22,23] or thermal [24,25] co-decomposition of suitable precursors, allowing simultaneous formation of different elements and reaction between them. This laser technique makes possible chemical vapor deposition of nanosized tin sulfides [22], germanium sulfides [23], tin telluride [24] and germanium tellurides [25].…”

UV Laser Deposition of SiS/Poly(thiacarbosilane) Composites and their Conversion to SiO/Poly(thiacarbosiloxane) Composites

“…Novel polymeric films can be also gas‐phase deposited upon ArF laser‐irradiation of carbon disulfide in the presence of suitable compound. Thus, the gas‐phase photolysis of CS 2 in the presence of ethene allows deposition of conjugated, nano‐chained CS 2 C 2 H 4 ‐ co ‐polymer in which content of different sub‐units is affected by irradiation conditions,8, 9 and the gas‐phase co‐photolysis of carbon disulfide and tetramethyl tin affords deposition of tin sulfides incorporated in a network of a blend of polythiene and organotin polymers 10…”

“…Nanosized metal chalcogenide particles dispersed within polymer matrices represent an interesting family of novel materials promising for luminescent and photovoltaic devices. Studies of nanosized sulfides of the 4B group elements (Si, Ge, Sn, Pb) are restricted to those of lead,16 tin17 and germanium,10 because high sensitivity of silicon sulfides to water precludes their having any practical use under normal conditions. Fabrication of silicon sulfide/polymer nanocomposites wherein nanosized silicon sulfide is embedded in and protected towards hydrolysis/oxidation by polymer matrix is therefore highly desirable.…”