2007
DOI: 10.1016/j.jorganchem.2007.06.008
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Gas-phase formation of SiSe in IR laser-co-decomposition of dimethyl selenide and 1,3-disilacyclobutane

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Cited by 5 publications
(3 citation statements)
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“…The presented results are an extension of our previous effort on (i) laser-induced gas-phase co-pyrolytic synthesis of inorganic compounds [21][22][23][24] and (ii) IR laser-dielectric breakdown-induced formation of Sn/Ge metastable films from gaseous stannane and germane [25].…”
Section: Introductionmentioning
confidence: 55%
“…The presented results are an extension of our previous effort on (i) laser-induced gas-phase co-pyrolytic synthesis of inorganic compounds [21][22][23][24] and (ii) IR laser-dielectric breakdown-induced formation of Sn/Ge metastable films from gaseous stannane and germane [25].…”
Section: Introductionmentioning
confidence: 55%
“…A LIF excitation spectrum of SiSe obtained upon CO 2 laser irradiation of gaseous mixture of 1,3-disilacyclobutane and dimethyl selenide is consistent with infrared multiple photon decomposition of both compounds and interference of both decompositions resulting in the transient formation of SiSe [ 63 , 64 ]. The SiSe formation was explained in terms of reaction of Se atoms with RHSi: silylenes (R = CH 3 , H) and elimination of RH from silaneselones RHSiSe ( Scheme 10 ).…”
Section: Deposition Of Metal Chalcogenidesmentioning
confidence: 85%
“…This synthesis has been achieved through co-decomposition of suitable precursors and transient formation of silicon and chalcogene elements in the gas phase. Thus, the IR laser-induced co-decomposition of dimethyl selenide and trisilane [26] or dimethyl selenide and www.elsevier.com/locate/jaap 1,3-disilacyclobutane [27] yields gaseous SiSe and affords chemical vapor deposition of nanostructured H/Si/Se/C films. In addition, the IR laser co-decomposition of trisilane and thiirane allows gas-phase formation of SiS and chemical vapor deposition of polycarbosilthiane films [28].…”
Section: Introductionmentioning
confidence: 99%