ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD

Eres, Gyula; Geohegan, David B.; Lowndes, D. H.; Mashburn, D. N.

doi:10.1016/0169-4332(89)90900-8

Cited by 16 publications

(8 citation statements)

References 12 publications

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“…Eres et al proposed reaction r18 based on the observation of fluorescence assigned to SiH 2 (Ã 1 B 1 −X̃ 1 A 1 ). According to our interpretation of SiH 4 formation, reactions r17 and r18 should be minor.…”

Section: Discussionmentioning

confidence: 99%

“…For the formation of excited SiH 2 , the following three reactions need to be considered: Eres et al 2 proposed reaction r18 based on the observation of fluorescence assigned to SiH 2 (A ˜1B 1 -X ˜1A 1 ). According to our interpretation of SiH 4 formation, reactions r17 and r18 should be minor.…”

Section: Discussionmentioning

confidence: 99%

“…Understanding the gas-phase photochemistry of Si 2 H 6 is critical to clarify the mechanism of Si thin film growth in LCVD. Thus, the photodissociation processes of Si 2 H 6 at 193 nm have been studied extensively by various experimental techniques. − In 193 nm photolysis of Si 2 H 6 , 21 dissociation pathways are energetically possible since one 193 nm photon (148 kcal/mol) provides enough energy to break any single bond in Si 2 H 6 and numerous combinations of bonds, as summarized in Table .…”

Section: Introductionmentioning

confidence: 99%

“…Okada et al reported the quantum yield of Si atom formation by [2 + 1] resonance-enhanced multiphoton ionization (REMPI) and detection of Si 2 and SiH radicals by laser-induced fluorescence (LIF) technique. It has been proposed that disilicon species such as H 3 SiSiH or H 2 SiSiH 2 produced by 193 nm photolysis of Si 2 H 6 may play a key role in the LCVD. ,, There are arguments with respect to the formation of SiH 2 in 193 nm photolysis of Si 2 H 6 . No SiH 2 has been detected by using intracavity laser spectroscopy 3 and LIF methods .…”

Section: Introductionmentioning

confidence: 99%

“…It has been proposed that disilicon species such as H 3 SiSiH or H 2 SiSiH 2 produced by 193 nm photolysis of Si 2 H 6 may play a key role in the LCVD. 1,2,7 There are arguments with respect to the formation of SiH 2 in 193 nm photolysis of Si 2 H 6 . No SiH 2 has been detected by using intracavity laser spectroscopy 3 and LIF methods.…”

Section: Introductionmentioning

confidence: 99%

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Photolysis of Disilane at 193 nm

et al. 1999

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The primary photochemical process of Si2H6 at 193 nm has been studied by using time-resolved mass spectrometry and laser-induced fluorescence (LIF) techniques. Si2H2 was confirmed as a primary photoproduct, but no signal due to SiH3, Si2H3, Si2H4, and Si2H5 in 193 nm photolysis has been detected. SiH2 was observed in a pump-and-probe experiment by the LIF method, which rapidly reacts with the Si2H6 parent molecule to form Si3H8. The quantum yield of Si3H8 produced in the reaction of SiH2 + Si2H6 was estimated to be 0.13 ± 0.02 by using electron impact mass spectrometry. It was concluded that SiH2 produced by the photolysis exclusively reacted with Si2H6 and thus the quantum yield of SiH2 was equal to that of Si3H8, i.e., 0.13. The quantum yield of H atom was estimated to be 0.09 ± 0.01 by using vacuum ultraviolet (VUV) LIF. On the basis of the existing data and present results, it was suggested that the H2 molecule production channels are dominant in 193 nm photolysis of Si2H6.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%