Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

Yamano

Ahn

et al. 2010

We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO 2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress-and defect-free InP regions on SiO 2 towards the application to next generation MOSFETs as the channel materials.

Section: Introductionmentioning

confidence: 99%

Selective area growth of InP on nano-patterned SiO<inf>2</inf>/Si(100) substrates by molecular beam epitaxy

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

Yamano

Ahn

et al. 2010

“…It has been reported that successful heteroepitaxy of InP on Si has usually been achieved by inserting thin GaAs [4], InP/GaAs [5] or InAsP/InP superlattice [6] layer as an intermediate buffer layer. Especially, lattice strain increases with increasing growth area in the heteroepitaxy [7].…”

Section: Introductionmentioning

confidence: 99%

Selective growth of InP on areas (1μm×1μm) of silicon (100) substrate by molecular beam epitaxy

Araki

2008 20th International Conference on Indium Phosphide and Related Materials

Asahi

2008

To use 111-V compound semiconductors as channel materials in the future advanced MISFETs with high performance, it is important to achieve the growth of III-V-on-Insulator structures on Si substrates. As a first step to accomplish this, we propose the selective formation of InP only on localized areas of Si (100) substrate by molecular beam epitaxy (MBE). It was found that InP was selectively grown only on bare Si window areas, while not grown on native silicon oxide areas at elevated substrate temperature (500°C). It was also found that by decreasing the window size (0.7xO.7 pm 2 ) only single grain of InP was grown on each bare Si window area. This indicates that the selective MBE growth of InP on Si substrate is possible.

“…It has been reported that successful heteroepitaxy of InP on Si has usually been achieved by inserting thin GaAs [4], InP/GaAs [5] or InAsP/InP superlattice [6] layer as an in-termediate buffer layer. Especially, lattice strain increases with increasing growth area in the heteroepitaxy [7].…”

mentioning

confidence: 99%

Selective growth of InP on localized areas of silicon (100) substrate by molecular beam epitaxy

Araki

Seo

Phys. Status Solidi (c)

et al. 2008

To use III‐V compound semiconductors as channel materials in the future advanced MISFETs with high performance, it is important to acheive the growth of III‐V‐on‐Insulator structures on Si substrates. As a first step to accomplish this, we propose the selective formation of InP only on localized areas of Si (100) substrate by molecular beam epitaxy (MBE). It was found that InP was selectively grown only on bare Si window areas, while not grown on native silicon oxide areas at elevated substrtate temperatures (500°C). It was also found that by decreasing the window size (0.7×0.7 μm2) only single grain of InP was grown on each bare Si window area. This indicates that the selective MBE growth of InP on Si substrate is possible. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)