Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons

Kim, Hyun‐Wook; Kang, Heebum; Hong, Eunryeong; Woo, Jiyong

doi:10.1109/jeds.2022.3169745

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…Therefore, if NbO 2 exhibits a high on/off resistance ratio, it will enable a broader series resistance range that complies with the self-oscillation conditions. Moreover, a large oscillation amplitude of the NbO 2 device is desirable for the precise classification of the weighted sum [16,17].…”

Section: Resultsmentioning

confidence: 99%

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Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Kwon,

Heo,

Kim

et al. 2023

Nanotechnology

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The Niobium Dioxide (NbO2) oscillator neuron has garnered significant interest because of its simple structure compared to conventional CMOS-based circuits. However, the limited on/off resistance ratio narrows the range of series resistances that satisfy the self-oscillation conditions and limits its use in large-scale synaptic arrays. In this study, we report the possibility of improving the performance of NbO2-based oscillator neuron devices through cryogenic operation. The study emphasizes two crucial parameters: the on/off resistance ratio and the oscillation amplitude, both of which are essential for accurate weighted sum classification. The data suggest that these parameters can be effectively enhanced under cryogenic conditions. In addition, we revealed that 120 K is the optimal temperature for cryogenic operation, as it represents the temperature where the on/off resistance ratio ceases to increase. As a result, we revealed that the series resistance range satisfying the self-oscillation condition in a single oscillator increases from 20 to 126 kΩ. The research also probes the maximum possible array size at each temperature. At 300 K, representation is only possible for a 5 × 5 array, but at 120 K, a 30 × 30 array can be represented as a frequency. The evidence implies that the 120 K conditions not only broaden the range of series resistors that can be connected to a single oscillator but also increases the array size, thereby representing different weighted sum currents as frequencies. The research indicates that using carefully optimized cryogenic operation could be a viable method to enhance the necessary NbO2 properties for an oscillator neuron device.

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Section: Resultsmentioning

confidence: 99%

“…However, the voltage division between the barrier layer and the on-state NbO 2 can cause an increase in the hold voltage, leading to a decrease in the oscillation amplitude [15]. Consequently, the reduced amplitude poses a challenge in accurately classifying the frequency of the weighted sum [16,17].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Kwon,

Heo,

Kim

et al. 2023

Nanotechnology

View full text Add to dashboard Cite

show abstract

Brain-Inspired Mutual Synchronization in Cross-Coupled NbO_x Oscillation Neurons for Oscillatory Neural Network Applications

Kim

Jeon

et al. 2023

IEEE Access

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Forming-Free NbO_x-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves

Ding

Yuan

et al. 2022

IEEE Trans. Electron Devices

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Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons

Cited by 6 publications

References 17 publications

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Brain-Inspired Mutual Synchronization in Cross-Coupled NbO_x Oscillation Neurons for Oscillatory Neural Network Applications

Forming-Free NbO_x-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves

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Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons

Cited by 6 publications

References 17 publications

Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation

Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation

Brain-Inspired Mutual Synchronization in Cross-Coupled NbOx Oscillation Neurons for Oscillatory Neural Network Applications

Forming-Free NbO x -Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves

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Product

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Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation

Brain-Inspired Mutual Synchronization in Cross-Coupled NbO_x Oscillation Neurons for Oscillatory Neural Network Applications

Forming-Free NbO_x-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves